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RLD03N06CLESM

0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs

Theseareintelligentmonolithicpowercircuitswhichincorporatealateralbipolartransistor,resistors,zenerdiodesandapowerMOStransistor.Thecurrentlimitingofthesedevicesallowittobeusedsafelyincircuitswhereashortedloadconditionmaybeencountered.Thedrainto source

Intersil

Intersil Corporation

RLD03N06CLESM

0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

EMB03N06HS

N??hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS60V RDSON(MAX.)3mΩ ID97A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

EMD03N06E

N??hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS60V RDSON(MAX.)3.5mΩ ID180A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

EMD03N06ES

N??hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS60V RDSON(MAX.)4.1mΩ ID90A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

EMD03N06ES

N??hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS60V RDSON(MAX.)4.0mΩ ID150A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

EMD03N06FS

N??hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS60V RDSON(MAX.)4.1mΩ ID90A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

EMD03N06HS

N??hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS60V RDSON(MAX.)3mΩ ID97A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

MCQ03N06

DualN-ChannelPowerMOSFET

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

MCT03N06

N-ChannelEnhancementModeFieldEffectTransistor

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

RLD03N06CLE

0.3A,60V,6Ohm,ESDRated,CurrentLimited,VoltageClamped,LogicLevelN-ChannelPowerMOSFETs

Theseareintelligentmonolithicpowercircuitswhichincorporatealateralbipolartransistor,resistors,zenerdiodesandapowerMOStransistor.Thecurrentlimitingofthesedevicesallowittobeusedsafelyincircuitswhereashortedloadconditionmaybeencountered.Thedrainto source

Intersil

Intersil Corporation

RLD03N06CLE

0.3A,60V,ESDRated,CurrentLimited,VoltageClampedLogicLevelN-ChannelEnhancement-ModePowerMOSFETs

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RLP03N06CLE

0.3A,60V,6Ohm,ESDRated,CurrentLimited,VoltageClamped,LogicLevelN-ChannelPowerMOSFETs

Theseareintelligentmonolithicpowercircuitswhichincorporatealateralbipolartransistor,resistors,zenerdiodesandapowerMOStransistor.Thecurrentlimitingofthesedevicesallowittobeusedsafelyincircuitswhereashortedloadconditionmaybeencountered.Thedrainto source

Intersil

Intersil Corporation

RLP03N06CLE

0.3A,60V,ESDRated,CurrentLimited,VoltageClampedLogicLevelN-ChannelEnhancement-ModePowerMOSFETs

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

YJL03N06A

N-ChannelEnhancementModeFieldEffectTransistor

YANGJIEYangzhou yangjie electronic co., ltd

揚(yáng)州揚(yáng)杰電子揚(yáng)州揚(yáng)杰電子科技股份有限公司

YJL03N06B

N-ChannelEnhancementModeFieldEffectTransistor

YANGJIEYangzhou yangjie electronic co., ltd

揚(yáng)州揚(yáng)杰電子揚(yáng)州揚(yáng)杰電子科技股份有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    RLD03N06CLESM

  • 制造商:

    Rochester Electronics LLC

  • 功能描述:

    - Bulk

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
FAIRCHILD/仙童
24+
5000
只做原廠渠道 可追溯貨源
詢價(jià)
FAICHILD
24+
105000
詢價(jià)
Intersil
23+
原廠原裝
1400
全新原裝
詢價(jià)
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
HAR
23+
RLD03N06CLES
13528
振宏微原裝正品,假一罰百
詢價(jià)
INTERSIL
23+
65480
詢價(jià)
FAIRCHILD
2023+
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
詢價(jià)
FAICHILD
24+
35200
一級(jí)代理/放心采購(gòu)
詢價(jià)
FAICHILD
08+
5000
普通
詢價(jià)
F
23+
SOT-252
10000
公司只做原裝正品
詢價(jià)
更多RLD03N06CLESM供應(yīng)商 更新時(shí)間2025-1-18 16:36:00