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RJH60F7

Silicon N Channel IGBT High Speed Power Switching

Features Lowcollectortoemittersaturationvoltage VCE(sat)=1.35Vtyp.(atIC=50A,VGE=15V,Ta=25°C) Builtinfastrecoverydiodeinonepackage Trenchgateandthinwafertechnology Highspeedswitching tf=74nstyp.(atIC=30A,VCE=400V,VGE=15V,Rg

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RJH60F7

Silicon N Channel IGBT High Speed Power Switching

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RJH60F7

Silicon N Channel IGBT High Speed Power Switching

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RJH60F7ADPK

Silicon N Channel IGBT High Speed Power Switching

Features Lowcollectortoemittersaturationvoltage VCE(sat)=1.35Vtyp.(atIC=50A,VGE=15V,Ta=25°C) Builtinfastrecoverydiodeinonepackage Trenchgateandthinwafertechnology Highspeedswitching tf=74nstyp.(atIC=30A,VCE=400V,VGE=15V,Rg

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RJH60F7ADPK-00-T0

Silicon N Channel IGBT High Speed Power Switching

Features Lowcollectortoemittersaturationvoltage VCE(sat)=1.35Vtyp.(atIC=50A,VGE=15V,Ta=25°C) Builtinfastrecoverydiodeinonepackage Trenchgateandthinwafertechnology Highspeedswitching tf=74nstyp.(atIC=30A,VCE=400V,VGE=15V,Rg

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RJH60F7BDPQ-A0

600V - 50A - IGBT High Speed Power Switching

Features Lowcollectortoemittersaturationvoltage VCE(sat)=1.35Vtyp.(atIC=50A,VGE=15V,Ta=25°C) Builtinfastrecoverydiodeinonepackage Trenchgateandthinwafertechnology Highspeedswitching tf=74nstyp.(atIC=30A,VCE=400V,VGE=15V,Rg

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RJH60F7DPQ-A0

Silicon N Channel IGBT High Speed Power Switching

Features ?Lowcollectortoemittersaturationvoltage VCE(sat)=1.35Vtyp.(atIC=50A,VGE=15V,Ta=25°C) ?Builtinfastrecoverydiodeinonepackage ?Trenchgateandthinwafertechnology ?Highspeedswitching tf=74nstyp.(atIC=30A,VCE=400V,VGE=15V,

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RJH60F7DPQ-A0-T0

Silicon N Channel IGBT High Speed Power Switching

Features ?Lowcollectortoemittersaturationvoltage VCE(sat)=1.35Vtyp.(atIC=50A,VGE=15V,Ta=25°C) ?Builtinfastrecoverydiodeinonepackage ?Trenchgateandthinwafertechnology ?Highspeedswitching tf=74nstyp.(atIC=30A,VCE=400V,VGE=15V,

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RJH60F7ADPK

Silicon N Channel IGBT High Speed Power Switching

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RJH60F7ADPK

Silicon N Channel IGBT High Speed Power Switching

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細參數(shù)

  • 型號：

    RJH60F7

  • 制造商：

    RENESAS

  • 制造商全稱：

    Renesas Technology Corp

  • 功能描述：

    Silicon N Channel IGBT High Speed Power Switching

供應商型號品牌批號封裝庫存備注價格
Renesas(瑞薩)
23+
標準封裝
8048
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
Renesas(瑞薩)
23+
原廠封裝
32078
10年以上分銷商,原裝進口件,服務(wù)型企業(yè)
 詢價
RENESAS
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
瑞薩
15+
TO-3P
90
原裝正品現(xiàn)貨,可開發(fā)票,假一賠十
 詢價
NORDIC
2021++
QFN20
8000
原裝正品價格優(yōu)勢!歡迎詢價QQ:385913858TEL:15
 詢價
RENESAS
23+
TO-247
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
RENESAS/瑞薩
23+
TO-247
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
RENESAS/瑞薩20
2022+
TO-247
18954
原廠代理 終端免費提供樣品
 詢價
瑞薩
2048+
TO-3P
9851
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
RENESAS
15+
TO-247
6
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
更多RJH60F7供應商 更新時間2025-3-30 23:00:00

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