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RFV10N50中文資料Intersil數(shù)據(jù)手冊(cè)PDF規(guī)格書

RFV10N50
廠商型號(hào)

RFV10N50

功能描述

10A, 500V, Fast Switching N-Channel Enhancement-Mode Power MOSFETs

文件大小

66.36 Kbytes

頁(yè)面數(shù)量

6 頁(yè)

生產(chǎn)廠商 Intersil Corporation
企業(yè)簡(jiǎn)稱

Intersil

中文名稱

Intersil Corporation官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

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更新時(shí)間

2025-1-2 17:45:00

RFV10N50規(guī)格書詳情

Description

The RFV10N50BE is an N-Channel fast switching MOSFET transistor that is designed for switching regulators, inverters and motor drivers. The RFV10N50BE is a monolithic structure incorporating a high voltage, high current MOSFET, a control MOSFET and ESD protection diodes. As indicated in the symbol to the right, the turn-on of the main MOSFET is controlled by Gate 1 (G1). The control MOSFET, controlled by Gate 2 (G2), is distributed throughout the structure. Gate 2 provides a very low impedance and inductive path to rapidly discharge the gate of the main MOSFET. Gate 2 affords very fast turn-off (typically less than 25ns) when desired. A separate return connection, Source Kelvin (SK), is supplied for the gate drive circuit to avoid voltage induced transients from the output circuit during switching. The RFV10N50BE can be operated directly from integrated circuits.

Features

? 10A, 500V

? rDS(ON) = 0.480?

? Very Fast Turn-Off Characteristics

? Nanosecond Switching Speeds

? Electrostatic Discharge Protected

? UIS Rating Curve

? SOA is Power Dissipation Limited

? High Input Impedance

產(chǎn)品屬性

  • 型號(hào):

    RFV10N50

  • 制造商:

    INTERSIL

  • 制造商全稱:

    Intersil Corporation

  • 功能描述:

    10A, 500V, Fast Switching N-Channel Enhancement-Mode Power MOSFETs

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