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RFP12N10

12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These

Intersil

Intersil Corporation

RFP12N10

12A, 80Vand 100V, 0.200 Ohm, N-Channel Power MOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

RFP12N10

12A, 80Vand 100V, 0.200 Ohm, N-Channel Power MOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

RFP12N10L

12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsspecificallydesignedforusewithlogiclevel(5V)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitchingandsolenoiddrivers.Thisperformanceisaccomplishedthroughaspecialgate

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFP12N10L

12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsspecificallydesignedforusewithlogiclevel(5V)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitchingandsolenoiddrivers.Thisperformanceisaccomplishedthroughaspecialgate

Intersil

Intersil Corporation

RFP12N10L

N-Channel Logic Level Power Field-Effect Transistors (L2 FET)

TheRFM12N08LandRFM12N10LandtheRFP12N08LandRFP12N10Laren-channelenhancement-modesilicon-gatepowerfield-effecttransistorsspecificallydesignedforusewithlogiclevel(5volt)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddriver

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

RFP12N10L

N-Channel 100-V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

SPR12N10

N-ChannelEnhancementModePowerMOSFET

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SSP12N10

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

ST12N10D

N-Channel100V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

ST12N10D

NChannelEnhancementModeMOSFET

STANSON

Stanson Technology

STD12N10L

N-Channel100V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

STD12N10L

N-CHANNEL100V-0.12ohm-12ATO-252LOWTHRESHOLDPOWERMOSTRANSISTOR

N-CHANNEL100V-0.12?-12ATO-252LOWTHRESHOLDPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.12? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■LOWTHRESHOLDDRIVE ■FORTHROUGH-HOLEVERSIONCONTACT SALESOFFICE APPLI

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

T12N10

N-Channel100V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

T12N10G

N-Channel100V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

TSG12N10AT

100VN-ChannelDTMOS

WUMCWuxi Unigroup Microelectronics Company

紫光國微紫光國芯微電子股份有限公司

UT12N10

N-Channel100V(D-S)MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?175°CJunctionTemperature ?PWMOptimized ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?PrimarySideSwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

UT12N10

12Amps,100VoltsN-CHANNELPOWERMOSFET

DESCRIPTION TheUTCUT12N10isanN-channelmodePowerFETusingUTC’sadvancedtechnologytoprovidecustumerswithminimumon-stateresistancebyextremelyhighdensecelldesign.Moreover,it‘sgoodathandinghighpowerandcurrent. FEATURES *RDS(ON)

UTCUnisonic Technologies

友順友順科技股份有限公司

WSF12N10

N-ChMOSFET

WIINSOKShenzhen Guan Hua Wei Ye Co., Ltd

微碩半導(dǎo)體微碩半導(dǎo)體(深圳)有限公司

WSF12N10G

ConsumerelectronicpowersupplyMotorcontrol

WIINSOKShenzhen Guan Hua Wei Ye Co., Ltd

微碩半導(dǎo)體微碩半導(dǎo)體(深圳)有限公司

詳細(xì)參數(shù)

  • 型號:

    RFP12N10

  • 制造商:

    Rochester Electronics LLC

  • 功能描述:

    - Bulk

供應(yīng)商型號品牌批號封裝庫存備注價格
INTERSIL/FSC
23+
TO-220
28610
詢價
HAR
24+
N/A
5000
公司存貨
詢價
INTERSIL
17+
TO-220
6200
詢價
HARRIS
16+
TO-220
10000
全新原裝現(xiàn)貨
詢價
HARRIS
2020+
TO-220
350000
100%進(jìn)口原裝正品公司現(xiàn)貨庫存
詢價
INTESIL
23+
TO-220
8000
專做原裝正品,假一罰百!
詢價
NEXPERIA/安世
23+
SOT223
69820
終端可以免費(fèi)供樣,支持BOM配單!
詢價
FAIRCHILD/仙童
23+
TO-220
10000
公司只做原裝正品
詢價
INTERSIL
2022+
to-220
12888
原廠代理 終端免費(fèi)提供樣品
詢價
FAIRCHILD/仙童
23+
TO-220
6000
原裝正品,支持實(shí)單
詢價
更多RFP12N10供應(yīng)商 更新時間2024-12-26 17:09:00