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RD8.2E

500 mW PLANAR TYPE SILICON ZENER DIODES

TheRD2.0EtoRD120Earezenerdiodeswithanallowabledissipationof500mWandaplanartypeglasssealedDHD(doubleheatsinkdiode)structure. FEATURES ?Thezenervoltageserieshasawidevoltagerangeof2Vto120Vandisidealforstandardization. ?TheE24seriesisemployedforthe

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

RD8.2E

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

RD8.2E

SILICON ZENER DIODES

EIC

EIC discrete Semiconductors

RD8.2EAB

400 mW DHD ZENER DIODE DO-34

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

RD8.2EAB1

400 mW DHD ZENER DIODE DO-34

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

RD8.2EAB2

400 mW DHD ZENER DIODE DO-34

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

RD8.2EAB3

400 mW DHD ZENER DIODE DO-34

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

RD8.2EAB4

400 mW DHD ZENER DIODE DO-34

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

RD8.2EB

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

RD8.2EB1

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

RD8.2EB2

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

RD8.2EB3

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

RD8.2EB4

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

RD8.2EB5

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

RD8.2EB6

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

RD8.2EB7

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

RD8.2ES

400 mW DHD ZENER DIODE DO-34

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

RD8.2ES

ZENER DIODES

EIC

EIC discrete Semiconductors

詳細參數(shù)

  • 型號:

    RD8.2E

  • 制造商:

    EIC

  • 制造商全稱:

    EIC discrete Semiconductors

  • 功能描述:

    SILICON ZENER DIODES

供應(yīng)商型號品牌批號封裝庫存備注價格
24+
5000
公司存貨
詢價
NEC
23+
DO-35
12000
原裝正品假一罰百!可開增票!
詢價
NEC
BC(B1)
8560
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
詢價
NEC
22+
DO-35
30000
十七年VIP會員,誠信經(jīng)營,一手貨源,原裝正品可零售!
詢價
NEC/RENESAS瑞薩
23+
DO-35
89630
當天發(fā)貨全新原裝現(xiàn)貨
詢價
NEC
23+
BC(B1)
880000
明嘉萊只做原裝正品現(xiàn)貨
詢價
NEC
05+
原廠原裝
36051
只做全新原裝真實現(xiàn)貨供應(yīng)
詢價
NEC
23+
原廠原裝
3005
優(yōu)勢庫存
詢價
NEC
23+
NA
1986
專做原裝正品,假一罰百!
詢價
NEC
22+23+
New
36203
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨
詢價
更多RD8.2E供應(yīng)商 更新時間2024-11-8 16:00:00