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RD28F1602C3TD70規(guī)格書詳情
Introduction
This document contains the specifications for the Intel? Advanced+ Boot Block Flash Memory (C3) Stacked Chip Scale Package (SCSP) device. C3 SCSP memory solutions are offered in the following combinations:
? 32-Mbit flash + 8-Mbit SRAM
? 32-Mbit flash + 4-Mbit SRAM
? 16-Mbit flash + 4-Mbit SRAM
? 16-Mbit flash memory + 2-Mbit SRAM
Product Overview
The C3 SCSP device combines flash memory and SRAM into a single package, which provides secure low-voltage memory solutions for portable applications.
The flash memory provides the following features:
? Enhanced security.
? Instant locking/unlocking of any flash block with zero-latency
? A 128-bit protection register that enables unique device identification,
to meet the needs ofnext generation portable applications.
? Improved 12 V production programming for increased factory throughput.
Product Features
■ Flash Memory Plus SRAM
—Reduces Memory Board Space
Required, Simplifying PCB Design
Complexity
■ SCSP Technology
—Smallest Memory Subsystem Footprint
—Area : 8 x 10 mm for 16 Mbit (0.13 μm)
Flash + 2 Mbit or 4 Mbit SRAM
—Area : 8 x 12 mm for 32 Mbit (0.13 μm)
Flash + 4 Mbit or 8 Mbit SRAM
—Height : 1.20 mm for 16 Mbit (0.13 μm)
Flash + 2 Mbit or 4 Mbit SRAM, and 32
Mbit (0.13um) Flash + 8 Mbit SRAM
—Height : 1.40 mm for 32 Mbit (0.13 μm)
Flash + 4 Mbit SRAM
—This Family also includes 0.25 μm, 0.18
μm, and 0.13 μm technologies
■ Advanced SRAM Technology
—70 ns Access Time
—Low Power Operation
—Low Voltage Data Retention Mode
■ Intel? Flash Data Integrator (FDI) Software
—Real-Time Data Storage and Code
Execution in the Same Memory Device
—Full Flash File Manager Capability
■ Advanced+ Boot Block Flash Memory
—70 ns Access Time
—Instant, Individual Block Locking
—128 bit Protection Register
—12 V Production Programming
—Fast Program and Erase Suspend
—Extended Temperature –25 °C to +85 °C
■ Blocking Architecture
—Block Sizes for Code + Data Storage
—4-Kword Parameter Blocks
—64-Kbyte Main Blocks
—100,000 Erase Cycles per Block
■ Low Power Operation
—Asynchronous Read Current: 9 mA (Flash)
—Standby Current: 7 μA (Flash)
—Automatic Power Saving Mode
■ Flash Technologies
—0.25 μm ETOX? VI, 0.18 μm ETOX?
VII and 0.13 μm ETOX? VIII Flash
Technologies
產品屬性
- 型號:
RD28F1602C3TD70
- 制造商:
INTEL
- 制造商全稱:
Intel Corporation
- 功能描述:
3 VOLT INTEL Advanced+BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
23+ |
NA |
149 |
專做原裝正品,假一罰百! |
詢價 | |||
INTEL |
22+23+ |
TSOP |
35464 |
絕對原裝正品全新進口深圳現貨 |
詢價 | ||
INTEL |
23+ |
BGA |
30000 |
代理全新原裝現貨,價格優(yōu)勢 |
詢價 | ||
INT |
23+ |
BGA |
4500 |
全新原裝、誠信經營、公司現貨銷售 |
詢價 | ||
INT |
23+ |
BGA |
6500 |
絕對全新原裝!現貨!特價!請放心訂購! |
詢價 | ||
INTEL |
21+ |
BGA |
1523 |
公司現貨,不止網上數量!原裝正品,假一賠十! |
詢價 | ||
INTEL |
23+ |
BGA |
8560 |
受權代理!全新原裝現貨特價熱賣! |
詢價 | ||
INTEL/英特爾 |
2402+ |
BGA |
8324 |
原裝正品!實單價優(yōu)! |
詢價 | ||
INTEL |
19+ |
BGA |
256800 |
原廠代理渠道,每一顆芯片都可追溯原廠; |
詢價 | ||
INTEL |
23+ |
65480 |
詢價 |