零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
R740C | BARATRON GENERAL PURPOSE CAPACITANCE MANOMETERS WITH TRIP RELAYS | MKS MKS Instruments. | MKS | |
194UHigh,Full-sizeRackmountChassiswithBackplane/MainBoard,AT/ATXP/S Features ?194Uhigh,rackmountchassiscomplianttoEIARS-310Cstandard ?Detachablecardcageforeasyinstallationandmaintenance ?Provides250W/300W/400WATorATXpowersupply ?Providesbackplaneormainboard ?External:5.25spacex4+3.5spacex1 Internal:3.5sp | BOSERBOSER Technology Co., Ltd Boser Technology | BOSER | ||
194UHigh,Full-sizeRackmountChassiswithBackplane/MainBoard,AT/ATXP/S Features ?194Uhigh,rackmountchassiscomplianttoEIARS-310Cstandard ?Detachablecardcageforeasyinstallationandmaintenance ?Provides250W/300W/400WATorATXpowersupply ?Providesbackplaneormainboard ?External:5.25spacex4+3.5spacex1 Internal:3.5sp | BOSERBOSER Technology Co., Ltd Boser Technology | BOSER | ||
SiliconN-ChannelMOSFET | WinsemiShenzhen Wenxian Microelectronics Co., Ltd 穩(wěn)先微電子深圳市穩(wěn)先微電子有限公司 | Winsemi | ||
N-ChannelMOSFET | semiWell SemiWell Semiconductor | semiWell | ||
SiliconN-ChannelMOSFET | WinsemiShenzhen Wenxian Microelectronics Co., Ltd 穩(wěn)先微電子深圳市穩(wěn)先微電子有限公司 | Winsemi | ||
N-ChannelMOSFET | semiWell SemiWell Semiconductor | semiWell | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?EffectiveCossSpecified ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?SwitchModePower | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET FEATURES ?LowGateChargeQgResultsinSimpleDrive ??Requirement ?ImprovedGate,AvalancheandDynamicdV/dt ??Ruggedness ?FullyCharacterizedCapacitanceand ??AvalancheVoltageandCurrent ?EffectiveCossspecified(AN1001) ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchMod | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET FEATURES ?LowgatechargeQgresultsincimpledrive requirement ?Improvedgate,avalanche,anddynamicdV/dt ruggedness ?Fullycharacterizedcapacitanceandavalanche voltageandcurrent ?EffectiveCossspecified ?Materialcategorization:fordefinitionsofcompliance pleaseseewww | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET FEATURES ?LowGateChargeQgResultsinSimpleDrive ??Requirement ?ImprovedGate,AvalancheandDynamicdV/dt ??Ruggedness ?FullyCharacterizedCapacitanceand ??AvalancheVoltageandCurrent ?EffectiveCossspecified(AN1001) ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchMod | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
N-Channel650V(D-S)MOSFET FEATURES ?Reducedtrr,Qrr,andIRRM ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?LowswitchinglossesduetoreducedQrr ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) APPLICATIONS ?Telecommunications -Serverandtelecompowersupplies ?Light | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
PowerMOSFET FEATURES ?LowgatechargeQgresultsincimpledrive requirement ?Improvedgate,avalanche,anddynamicdV/dt ruggedness ?Fullycharacterizedcapacitanceandavalanche voltageandcurrent ?EffectiveCossspecified ?Materialcategorization:fordefinitionsofcompliance pleaseseewww | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET FEATURES ?LowGateChargeQgResultsinSimpleDrive ??Requirement ?ImprovedGate,AvalancheandDynamicdV/dt ??Ruggedness ?FullyCharacterizedCapacitanceand ??AvalancheVoltageandCurrent ?EffectiveCossspecified(AN1001) ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchMod | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET FEATURES ?LowGateChargeQgResultsinSimpleDrive ??Requirement ?ImprovedGate,AvalancheandDynamicdV/dt ??Ruggedness ?FullyCharacterizedCapacitanceand ??AvalancheVoltageandCurrent ?EffectiveCossspecified(AN1001) ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchMod | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingthenewLCDMOStechnology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedriverequirementsandtotalsystemsavings.I | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
N-Channel650V(D-S)MOSFET FEATURES ?Reducedtrr,Qrr,andIRRM ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?LowswitchinglossesduetoreducedQrr ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) APPLICATIONS ?Telecommunications -Serverandtelecompowersupplies ?Light | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
24+ |
DIP16 |
1 |
自己現(xiàn)貨 |
詢價 | |||
24+ |
N/A |
72000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
原廠 |
2023+ |
PLCC |
50000 |
原裝現(xiàn)貨 |
詢價 | ||
Honeywell |
ROHS |
145 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
RECOM |
20+ |
電源模塊 |
335 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
RECOM |
23+ |
SIPDIP |
11200 |
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO |
詢價 | ||
RECOM |
2021+ |
SIP |
11000 |
十年專營原裝現(xiàn)貨,假一賠十 |
詢價 | ||
Recom Power |
20+ |
N/A |
135 |
加我qq或微信,了解更多詳細信息,體驗一站式購物 |
詢價 | ||
RF SOLUTIONS |
22+ |
NA |
500000 |
萬三科技,秉承原裝,購芯無憂 |
詢價 | ||
RECOM |
23 |
SIP |
55000 |
原廠渠道原裝正品假一賠十 |
詢價 |
相關(guān)規(guī)格書
更多- R-743.3D
- R-743.3D
- R-743.3P
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相關(guān)庫存
更多- R-743.3D
- R-743.3P
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- R7447
- R7449
- R-745.0D
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