R2A25110KSP中文資料瑞薩數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

1. Description

The R2A25110KSP device is an intelligent power device for IGBT gate-drive in the high voltage inverter

application. The Micro Isolator with the coreless transformer structure is adopted for data transfer with

high voltage isolation between the primary circuit (MCU side) and the secondary circuit (IGBT side).

This device contains IGBT gate drive circuit, Miller clamp circuit, soft turn-off circuit as well as several

types of protection circuits such as IGBT temperature detection. This device also supports driving parallel

IGBTs.

1.1. Features

? On-chip Micro Isolator (isolated circuit)

High voltage isolation: 2500VRMS

? High Common Mode Rejection (CMR): over 35kV/us

? High output gate drive circuit

? Gate drive output resistance: 1.0 ohm max (IGBT parallel connection supported)

? On-chip active Miller clamp function

? On-chip soft turn-off function

? Various on-chip protection circuits

? IGBT emitter current detection circuit: 2 channels

Over current detection (threshold voltage: 0.25 V typ.), short circuit detection

(threshold voltage: 0.5 V typ.)

Over current detection function can be enabled/disabled (SEL pin)

? IGBT temperature detection circuit: 2 channels

? On-chip under voltage lockout circuit

VCC1 (5 V system): 4.1 V typ.

VCC2 (15 V system): 10 V typ.

? On-chip over temperature protection circuit (200 degC)

? FAULT feedback

Adjustable FAULT hold time with the external capacitor

? Operating temperature: - 40 to 125 degC (junction temperature: 150 degC max)

? On-chip 5 V regulator