R10DS0253EJ0201中文資料瑞薩數(shù)據(jù)手冊PDF規(guī)格書

Description

The RMLV0816BGSD is a family of 8-Mbit static RAMs organized 524,288-word × 16-bit, fabricated by Renesas’s

high-performance Advanced LPSRAM technologies. The RMLV0816BGSD has realized higher density, higher

performance and low power consumption. The RMLV0816BGSD offers low power standby power dissipation;

therefore, it is suitable for battery backup systems. It is offered in 52pin ?TSOP (II).

Features

? Single 3V supply: 2.4V to 3.6V

? Access time:

── Power supply voltage from 2.7V to 3.6V: 45ns (max.)

── Power supply voltage from 2.4V to 2.7V: 55ns (max.)

? Current consumption:

── Standby: 0.45μA (typ.)

? Equal access and cycle times

? Common data input and output

── Three state output

? Directly TTL compatible

── All inputs and outputs

? Battery backup operation