QPD1020

2.7 ??3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor

QPD1020

2.7 ??3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor

QPD1020EVB01

2.7 ??3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor

QPD1020EVB01

2.7 ??3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor

QPD1020S2

2.7 ??3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor

QPD1020S2

2.7 ??3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor

QPD1020SQ

2.7 ??3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor

QPD1020SQ

2.7 ??3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor

QPD1020SR

2.7 ??3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor

QPD1020SR

2.7 ??3.5 GHz, 50 V, 30 W GaN RF Input-Matched Transistor

RCWE1020

ThickFilmSurfaceMountChipResistors,

RF1020

SAWFilter

RFHA1020

280WGaNWIDE-BANDPULSEDPOWERAMPLIFIER

RFHA1020SB

280WGaNWIDE-BANDPULSEDPOWERAMPLIFIER

RFHA1020SQ

280WGaNWIDE-BANDPULSEDPOWERAMPLIFIER

RFHA1020SR

280WGaNWIDE-BANDPULSEDPOWERAMPLIFIER

RMCW1020

WideTerminationThickFilmChipResistor

Features: ?Smallsizeandlightweight ?Reliabilityandhighquality ?Widerterminationsprovidehigherpowerhandlingandmorerobustthermalperformance ?QualifiedtoAEC-Q200 ?RoHScompliant,leadfreeandhalogenfree ?REACHcompliant

RT1020

Crossoverprocessorsforindustrialproducts

RY1020S

iscSiliconPNPPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=-60V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat)=-1.1V(Max)@IC=-4A APPLICATIONS ·Designedforpoweramplifier,highspeedswitchingand regulatedpowersupplyapplications.

S1020L

SCRs1-70AMPSNON-SENSITIVEGATE

Features ●ElectricallyIsolatedPackages ●HighVoltageCapability-30-600Volts ●HighSurgeCapability-upto950Amps ●GlassPassivatedChip