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PYA28C010-20LMB

Access Times of 120, 150, 200, and 250ns Single 5V?10 Power Supply

PYRAMIDPYRAMID semiconductor corporation

金字塔半導(dǎo)體公司

AT28C010-20

1Megabit128Kx8PagedCMOSE2PROM

AtmelAtmel Corporation

愛(ài)特梅爾愛(ài)特梅爾公司

AT28C010-20

1Megabit128Kx8PagedCMOSE2PROM

TheAT28C010isahigh-performanceelectrically-erasableandprogrammablereadonlymemory.Its1megabitofmemoryisorganizedas131,072wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto120nswithpowerdissipationofjust220m

AtmelAtmel Corporation

愛(ài)特梅爾愛(ài)特梅爾公司

AT28C010-20JC

1Megabit128Kx8PagedCMOSE2PROM

TheAT28C010isahigh-performanceelectrically-erasableandprogrammablereadonlymemory.Its1megabitofmemoryisorganizedas131,072wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto120nswithpowerdissipationofjust220m

AtmelAtmel Corporation

愛(ài)特梅爾愛(ài)特梅爾公司

AT28C010-20JI

1Megabit128Kx8PagedCMOSE2PROM

TheAT28C010isahigh-performanceelectrically-erasableandprogrammablereadonlymemory.Its1megabitofmemoryisorganizedas131,072wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto120nswithpowerdissipationofjust220m

AtmelAtmel Corporation

愛(ài)特梅爾愛(ài)特梅爾公司

AT28C010-20PC

1Megabit128Kx8PagedCMOSE2PROM

TheAT28C010isahigh-performanceelectrically-erasableandprogrammablereadonlymemory.Its1megabitofmemoryisorganizedas131,072wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto120nswithpowerdissipationofjust220m

AtmelAtmel Corporation

愛(ài)特梅爾愛(ài)特梅爾公司

AT28C010-20PI

1Megabit128Kx8PagedCMOSE2PROM

TheAT28C010isahigh-performanceelectrically-erasableandprogrammablereadonlymemory.Its1megabitofmemoryisorganizedas131,072wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto120nswithpowerdissipationofjust220m

AtmelAtmel Corporation

愛(ài)特梅爾愛(ài)特梅爾公司

AT28C010-20TC

1Megabit128Kx8PagedCMOSE2PROM

TheAT28C010isahigh-performanceelectrically-erasableandprogrammablereadonlymemory.Its1megabitofmemoryisorganizedas131,072wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto120nswithpowerdissipationofjust220m

AtmelAtmel Corporation

愛(ài)特梅爾愛(ài)特梅爾公司

AT28C010-20TI

1Megabit128Kx8PagedCMOSE2PROM

TheAT28C010isahigh-performanceelectrically-erasableandprogrammablereadonlymemory.Its1megabitofmemoryisorganizedas131,072wordsby8bits.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto120nswithpowerdissipationofjust220m

AtmelAtmel Corporation

愛(ài)特梅爾愛(ài)特梅爾公司

FT28C010-20DB-AT

128Kx8Bit5VEEPROM

FORCE

Force Technologies Ltd

FT28C010-20DB-X

128Kx8Bit5VEEPROM

FORCE

Force Technologies Ltd

FT28C010-20DI-AT

128Kx8Bit5VEEPROM

FORCE

Force Technologies Ltd

FT28C010-20DI-X

128Kx8Bit5VEEPROM

FORCE

Force Technologies Ltd

FT28C010-20DM-AT

128Kx8Bit5VEEPROM

FORCE

Force Technologies Ltd

FT28C010-20DM-X

128Kx8Bit5VEEPROM

FORCE

Force Technologies Ltd

FT28C010-20EB-AT

128Kx8Bit5VEEPROM

FORCE

Force Technologies Ltd

FT28C010-20EB-X

128Kx8Bit5VEEPROM

FORCE

Force Technologies Ltd

FT28C010-20EI-AT

128Kx8Bit5VEEPROM

FORCE

Force Technologies Ltd

FT28C010-20EI-X

128Kx8Bit5VEEPROM

FORCE

Force Technologies Ltd

FT28C010-20EM-AT

128Kx8Bit5VEEPROM

FORCE

Force Technologies Ltd

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更多PYA28C010-20LMB供應(yīng)商 更新時(shí)間2024-11-16 14:16:00