PXAE263708NB-V1-R2分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料

PXAE263708NB-V1-R2屬于分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻。由WOLFSPEED, INC.制造生產(chǎn)的PXAE263708NB-V1-R2晶體管 - FET，MOSFET - 射頻射頻晶體管、FET 和 MOSFET 是具有三個端子的半導(dǎo)體器件，器件中電流受電場控制。該系列器件用于涉及射頻的設(shè)備。用于放大或切換信號或功率的晶體管類型包括：E-pHEMT、LDMOS、MESFET、N 溝道、P 溝道、pHEMT、碳化硅、2 N 溝道和 4 N 溝道。

Description

The PXAE263708NB is a 400-watt (P3dB) LDMOS FET intended for use

in multi-standard cellular power amplifier applications in the 2620 to

2690 MHz frequency band. Features include input and output matching,

high gain and a thermally-enhanced package with earless flange.

Manufactured with Wolfspeed's advanced LDMOS process, this device

provides excellent thermal performance and superior reliability.

Features

? Broadband internal input and output matching

? Asymmetric Doherty design

- Main: P1dB = 140 W Typ

- Peak: P1dB = 260 W Typ

? Typical pulsed CW performance, 2655 MHz, 28 V,

Doherty configuration, 10 μs, 10 duty cycle, class AB

- Output power at P1dB = 200 W

- Output power at P3dB = 400 W

- Efficiency = 49 (POUT = 57 W avg)

- Gain = 15 dB (POUT = 57 W avg)

? Capable of handling 10:1 VSWR @ 32 V, 100 W (CW)

output power

? Integrated ESD protection

? Human Body Model Class 2 (per ANSI/ESDA/JEDEC

JS-001)

? Low thermal resistance

? Pb-free and RoHS compliant