首頁(yè) >PST3810UR>規(guī)格書(shū)列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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SUPERCOMPACTPHOTOMULTIPLIERTUBES SuperCompact,13mm(1/2Inch)Diameter,9-stage,Side-onType R3810:Sb-Cs(185to650nm),R3811:Multialkali(185to850nm) FEATURES ●SuperCompact:13mm(1/2inch)diameter 17mmseatedlength ●HighSensitivity ●LowDarkCurrent APPLICATIONS ●GeneralInd | HAMAMATSUHamamatsu Photonics Co.,Ltd. 濱松光子濱松光子學(xué)株式會(huì)社 | HAMAMATSU | ||
SUPERCOMPACTPHOTOMULTIPLIERTUBE SUPERCOMPACTPHOTOMULTIPLIERTUBE ForSinglePhotonCounting,DarkCounts5cpsTyp.at25°C13mm(1/2Inch)Diameter,9-stage,BialkaliPhotocathode,Side-OnType185to650nmSpectralResponse,GeneralPurposeVariantofR3810 | HAMAMATSUHamamatsu Photonics Co.,Ltd. 濱松光子濱松光子學(xué)株式會(huì)社 | HAMAMATSU | ||
MediaTekGenio1200CortexA78&A552.5SBCwithUIO40-Express Features ?MediaTekGenio12004coresA78&4coresA55 ?OnboardLPDDR48GB,4000MT/smemory ?HDMI4k60fps,1xDualChannel24bitLVDS ?1x4-wireRS-232/422/485,2xUSB3.2Gen1By1,2xUSB2.0, 1xMicroSD,1xMic.in/Lineout ?1xM.23052KeyBfor5G,1xM.22230KeyESlot | ADVANTECHAdvantech Co., Ltd. 研華科技研華科技（中國(guó)）有限公司 | ADVANTECH | ||
ADAPTADORDEENCAPSULADOMSOP10ADIP10PINES Descripción AdaptadordeprogramaciónICWellsparaelpaqueteMSOP10 | AGELECTRONICA AG Electronica | AGELECTRONICA | ||
Rad-Hard60V,0.05APNPdualmatchedtransistor Features ?Hermeticpackages ?ESCCandJANSqualified ?Upto100krad(Si)lowdoserate Description 2N3810KandSOC3810HRaresiliconplanarPNPdualmatchedtransistors packagedinFlat-8andLCC-6respectivelyandavailablein100kradversions.They arespecificallydesignedforaero | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
Rad-Hard60V,0.05APNPdualmatchedtransistor Features ?Hermeticpackages ?ESCCandJANSqualified ?Upto100krad(Si)lowdoserate Description 2N3810KandSOC3810HRaresiliconplanarPNPdualmatchedtransistors packagedinFlat-8andLCC-6respectivelyandavailablein100kradversions.They arespecificallydesignedforaero | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
Rad-Hard60V,0.05APNPdualmatchedtransistor Features ?Hermeticpackages ?ESCCandJANSqualified ?Upto100krad(Si)lowdoserate Description 2N3810KandSOC3810HRaresiliconplanarPNPdualmatchedtransistors packagedinFlat-8andLCC-6respectivelyandavailablein100kradversions.They arespecificallydesignedforaero | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
Rad-Hard60V,0.05APNPdualmatchedtransistor Features ?Hermeticpackages ?ESCCandJANSqualified ?Upto100krad(Si)lowdoserate Description 2N3810KandSOC3810HRaresiliconplanarPNPdualmatchedtransistors packagedinFlat-8andLCC-6respectivelyandavailablein100kradversions.They arespecificallydesignedforaero | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
Rad-Hard60V,0.05APNPdualmatchedtransistor Features ?Hermeticpackages ?ESCCandJANSqualified ?Upto100krad(Si)lowdoserate Description 2N3810KandSOC3810HRaresiliconplanarPNPdualmatchedtransistors packagedinFlat-8andLCC-6respectivelyandavailablein100kradversions.They arespecificallydesignedforaero | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
DualN-Channel20V(D-S)MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?TrenchFET?PowerMOSFET ?100RgTested ?ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司 | VBSEMI |
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