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PS2532-1

HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SIRIES

DESCRIPTION ThePS2532-1,-2,-4andPS2532L-1,-2,-4areopticallycoupledisolatorscontainingaGaAslightemittingdiodeandanNPNsilicondarlingtonconnectedphototransistor. ThePS2532-1,-2,-4areinaplasticDIP(DualIn-linePackage)andthePS2532L-1,-2,-4areleadbendingtype

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

PS2532-1

HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SIRIES

DESCRIPTION ThePS2532-1andPS2532L-1areopticallycoupledisolatorscontainingaGaAslightemittingdiodeandanNPN silicondarlingtonconnectedphototransistor. ThePS2532-1isinaplasticDIP(DualIn-linePackage)andthePS2532L-1isleadbendingtype(Gull-wing)for surfacemount.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

PS2532-1-V

HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SIRIES

DESCRIPTION ThePS2532-1,-2,-4andPS2532L-1,-2,-4areopticallycoupledisolatorscontainingaGaAslightemittingdiodeandanNPNsilicondarlingtonconnectedphototransistor. ThePS2532-1,-2,-4areinaplasticDIP(DualIn-linePackage)andthePS2532L-1,-2,-4areleadbendingtype

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

PS2532-2

HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SIRIES

DESCRIPTION ThePS2532-1,-2,-4andPS2532L-1,-2,-4areopticallycoupledisolatorscontainingaGaAslightemittingdiodeandanNPNsilicondarlingtonconnectedphototransistor. ThePS2532-1,-2,-4areinaplasticDIP(DualIn-linePackage)andthePS2532L-1,-2,-4areleadbendingtype

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

PS2532-2-V

HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SIRIES

DESCRIPTION ThePS2532-1,-2,-4andPS2532L-1,-2,-4areopticallycoupledisolatorscontainingaGaAslightemittingdiodeandanNPNsilicondarlingtonconnectedphototransistor. ThePS2532-1,-2,-4areinaplasticDIP(DualIn-linePackage)andthePS2532L-1,-2,-4areleadbendingtype

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

PS2532-4

HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SIRIES

DESCRIPTION ThePS2532-1,-2,-4andPS2532L-1,-2,-4areopticallycoupledisolatorscontainingaGaAslightemittingdiodeandanNPNsilicondarlingtonconnectedphototransistor. ThePS2532-1,-2,-4areinaplasticDIP(DualIn-linePackage)andthePS2532L-1,-2,-4areleadbendingtype

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

PS2532-4-V

HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SIRIES

DESCRIPTION ThePS2532-1,-2,-4andPS2532L-1,-2,-4areopticallycoupledisolatorscontainingaGaAslightemittingdiodeandanNPNsilicondarlingtonconnectedphototransistor. ThePS2532-1,-2,-4areinaplasticDIP(DualIn-linePackage)andthePS2532L-1,-2,-4areleadbendingtype

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

PS2532L-1

HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SIRIES

DESCRIPTION ThePS2532-1,-2,-4andPS2532L-1,-2,-4areopticallycoupledisolatorscontainingaGaAslightemittingdiodeandanNPNsilicondarlingtonconnectedphototransistor. ThePS2532-1,-2,-4areinaplasticDIP(DualIn-linePackage)andthePS2532L-1,-2,-4areleadbendingtype

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

PS2532L1-1

HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SIRIES

DESCRIPTION ThePS2532-1,-2,-4andPS2532L-1,-2,-4areopticallycoupledisolatorscontainingaGaAslightemittingdiodeandanNPNsilicondarlingtonconnectedphototransistor. ThePS2532-1,-2,-4areinaplasticDIP(DualIn-linePackage)andthePS2532L-1,-2,-4areleadbendingtype

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

PS2532L1-1-V

HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SIRIES

DESCRIPTION ThePS2532-1,-2,-4andPS2532L-1,-2,-4areopticallycoupledisolatorscontainingaGaAslightemittingdiodeandanNPNsilicondarlingtonconnectedphototransistor. ThePS2532-1,-2,-4areinaplasticDIP(DualIn-linePackage)andthePS2532L-1,-2,-4areleadbendingtype

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

PS2532L-1-V

HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SIRIES

DESCRIPTION ThePS2532-1,-2,-4andPS2532L-1,-2,-4areopticallycoupledisolatorscontainingaGaAslightemittingdiodeandanNPNsilicondarlingtonconnectedphototransistor. ThePS2532-1,-2,-4areinaplasticDIP(DualIn-linePackage)andthePS2532L-1,-2,-4areleadbendingtype

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

PS2532L-2

HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SIRIES

DESCRIPTION ThePS2532-1,-2,-4andPS2532L-1,-2,-4areopticallycoupledisolatorscontainingaGaAslightemittingdiodeandanNPNsilicondarlingtonconnectedphototransistor. ThePS2532-1,-2,-4areinaplasticDIP(DualIn-linePackage)andthePS2532L-1,-2,-4areleadbendingtype

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

PS2532L2-1

HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SIRIES

DESCRIPTION ThePS2532-1,-2,-4andPS2532L-1,-2,-4areopticallycoupledisolatorscontainingaGaAslightemittingdiodeandanNPNsilicondarlingtonconnectedphototransistor. ThePS2532-1,-2,-4areinaplasticDIP(DualIn-linePackage)andthePS2532L-1,-2,-4areleadbendingtype

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

PS2532L2-1-V

HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SIRIES

DESCRIPTION ThePS2532-1,-2,-4andPS2532L-1,-2,-4areopticallycoupledisolatorscontainingaGaAslightemittingdiodeandanNPNsilicondarlingtonconnectedphototransistor. ThePS2532-1,-2,-4areinaplasticDIP(DualIn-linePackage)andthePS2532L-1,-2,-4areleadbendingtype

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

PS2532L-2-V

HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SIRIES

DESCRIPTION ThePS2532-1,-2,-4andPS2532L-1,-2,-4areopticallycoupledisolatorscontainingaGaAslightemittingdiodeandanNPNsilicondarlingtonconnectedphototransistor. ThePS2532-1,-2,-4areinaplasticDIP(DualIn-linePackage)andthePS2532L-1,-2,-4areleadbendingtype

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

PS2532L-4

HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SIRIES

DESCRIPTION ThePS2532-1,-2,-4andPS2532L-1,-2,-4areopticallycoupledisolatorscontainingaGaAslightemittingdiodeandanNPNsilicondarlingtonconnectedphototransistor. ThePS2532-1,-2,-4areinaplasticDIP(DualIn-linePackage)andthePS2532L-1,-2,-4areleadbendingtype

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

PS2532L-4-V

HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SIRIES

DESCRIPTION ThePS2532-1,-2,-4andPS2532L-1,-2,-4areopticallycoupledisolatorscontainingaGaAslightemittingdiodeandanNPNsilicondarlingtonconnectedphototransistor. ThePS2532-1,-2,-4areinaplasticDIP(DualIn-linePackage)andthePS2532L-1,-2,-4areleadbendingtype

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

PS2532-1

HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SERIES

CEL

California Eastern Labs

PS2532-1_03

HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SERIES

CEL

California Eastern Labs

PS2532-1-A

HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SERIES

CEL

California Eastern Labs

詳細參數(shù)

  • 型號:

    PS2532

  • 功能描述:

    晶體管輸出光電耦合器 Hi Col-Emit Dar 1-Ch

  • RoHS:

  • 制造商:

    Vishay Semiconductors

  • 輸入類型:

    DC

  • 最大集電極/發(fā)射極電壓:

    70 V

  • 最大集電極/發(fā)射極飽和電壓:

    0.4 V

  • 絕緣電壓:

    5300 Vrms

  • 電流傳遞比:

    100 % to 200 %

  • 最大正向二極管電壓:

    1.65 V

  • 最大輸入二極管電流:

    60 mA

  • 最大集電極電流:

    100 mA

  • 最大功率耗散:

    100 mW

  • 最大工作溫度:

    + 110 C

  • 最小工作溫度:

    - 55 C

  • 封裝/箱體:

    DIP-4

  • 封裝:

    Bulk

供應商型號品牌批號封裝庫存備注價格
瑞薩
23+
DIP4
8360
全新、原裝正品
詢價
NEC
23+
原裝正品
18689
詢價
NEC
24+
SOP-4
84
詢價
NEC
05+
原廠原裝
97
只做全新原裝真實現(xiàn)貨供應
詢價
NEC
2016+
SOP-4
6528
只做原裝正品現(xiàn)貨!或訂貨
詢價
NEC
04+
DIP
2000
詢價
原廠正品
23+
SMD
5000
原裝正品,假一罰十
詢價
NEC
2339+
DIP
5989
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
詢價
TOS
23+
DIP
8890
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
詢價
NEC
SOIC/3.9mm
10
原裝現(xiàn)貨海量庫存歡迎咨詢
詢價
更多PS2532供應商 更新時間2024-12-28 13:00:00