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PN4350

MSD Powersports Launch Master

MALLORYMallory Sonalert Products Inc.

馬洛里馬洛里MALLORY

PXB4350E

ICsforCommunications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

PXB4350E

ICsforCommunications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

R4350

SiliconPowerRectifier

SiliconPowerRectifier ?Softrecovery ?GlassPassivatedDie ?2500AmpsSurgeRating ?Glasstometalsealconstruction ?VRRMto1600V

MicrosemiMicrosemi Corporation

美高森美美高森美公司

RO4350

RFPowerFieldEffectTransistor

865--960MHz,28WAVG.,28VSINGLEW--CDMALATERALN--CHANNELRFPOWERMOSFET DesignedforCDMAbasestationapplicationswithfrequenciesfrom865to960MHz.CanbeusedinClassABandClassCforalltypicalcellularbasestationmodulationformats. ?TypicalSingle--CarrierW--CDMAPerfor

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

RO4350

RFPowerLDMOSTransistor

N--ChannelEnhancement--ModeLateralMOSFET This50wattRFpowerLDMOStransistorisdesignedforcellularbasestation applicationscoveringthefrequencyrangeof1805to1880MHz. ?TypicalSingle--CarrierW--CDMAPerformance:VDD=28Volts, IDQ=1800mA,Pout=50WattsAvg.,InputSign

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

RO4350B

GaNDohertyHybridAmplifier

RFHIC

rfhic

RO4350B

GaNDohertyHybridAmplifier

RFHIC

rfhic

RO4350B

RFPowerLDMOSTransistors

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

RO4350B

RFPowerFieldEffectTransistorsN--ChannelEnhancement--ModeLateralMOSFETs

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

RO4350B

RFPowerLDMOSTransistors

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

RO4350B

RFPowerLDMOSTransistorsHighRuggednessN--ChannelEnhancement--ModeLateralMOSFETs

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

RO4350B

RFPowerLDMOSTransistors

freescaleFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

RO4350B

GaNHybridPowerAmplifier

HONGFAHongfa Technology

宏發(fā)電聲廈門(mén)宏發(fā)電聲股份有限公司

RO4350B

GaNDohertyHybridAmplifier

RFHIC

rfhic

RO4350B

GaNDohertyHybridAmplifier

Description Accommodatingthefutureof4G/LTEsmallcells,RFHICintroducesRTH23007-10amplifierfabricatedusinganadvancedhighpowerdensityGalliumNitride(GaN)semiconductorprocess.Thishighperformanceamplifierachieveshighefficiencyof45,andpowers7Woverthefrequencyrange

RFHIC

rfhic

RO4350B

RFLDMOSWidebandIntegratedPowerAmplifiers

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

RO4350B

RFLDMOSWidebandIntegratedPowerAmplifiers

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

RO4350B

RFLDMOSWidebandIntegratedPowerAmplifiers

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

RO4350B

RFLDMOSWidebandIntegratedPowerAmplifier

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

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CENTRAL
23+
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19960
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24+
10000
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NS
2018+
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6528
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NS
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12588
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41207
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NATIONALSEMI
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80000
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NS/國(guó)半
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2985
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Central Semi
2022+
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8600
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷
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NATIONAL SEMICONDUCTOR
2023+
SMD
1759
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TO92
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更多PN4350供應(yīng)商 更新時(shí)間2024-11-17 15:00:00