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PMBF107

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinaSOT23envelopeandintendedforuseasalinecurrentinterruptorintelephonesetsandforapplicationsinrelay,high-speedandlinetransformerdrivers FEATURES ?DirectinterfacetoC-MOS,TTL,etc. ?High-speedswitchin

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PMBF170

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinaSOT23envelope.DesignedforuseasaSurfaceMountedDevice(SMD)inthinandthick-filmcircuitswithapplicationsinrelay,high-speedandlinetransformerdrivers. FEATURES ?DirectinterfacetoC-MOS,TTL,etc. ?High-s

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PMBF170

N-channel enhancement mode field-effect transistor

1.Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusing TrenchMOS?1technology. Productavailability: PMBF170inSOT23. 2.Features nTrenchMOS?technology nVeryfastswitching nLogiclevelcompatible nSubminiaturesurfacemountpackage. 3.Applica

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PMBF4391

N-channel FETs

DESCRIPTION Symmetricalsiliconn-channeldepletiontypejunctionfield-effecttransistorsonaplasticmicrominiatureenvelopeintendedforapplicationinthickandthin-filmcircuits.Thetransistorsareintendedforlow-powerchopperorswitchingapplicationsinindustry.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PMBF4391

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

PMBF4392

N-channel FETs

DESCRIPTION Symmetricalsiliconn-channeldepletiontypejunctionfield-effecttransistorsonaplasticmicrominiatureenvelopeintendedforapplicationinthickandthin-filmcircuits.Thetransistorsareintendedforlow-powerchopperorswitchingapplicationsinindustry.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PMBF4392

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

PMBF4393

N-channel FETs

DESCRIPTION Symmetricalsiliconn-channeldepletiontypejunctionfield-effecttransistorsonaplasticmicrominiatureenvelopeintendedforapplicationinthickandthin-filmcircuits.Thetransistorsareintendedforlow-powerchopperorswitchingapplicationsinindustry.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PMBF4393

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

PMBF4416

N-channel field-effect transistor

DESCRIPTION N-channelsymmetricalsiliconjunctionFETsinasurface-mountableSOT23envelope.ThesedevicesareintendedforuseinVHF/UHFamplifiers,oscillatorsandmixers. FEATURES ?Lownoise ?Interchangeabilityofdrainandsourceconnections ?Highgain.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

晶體管資料

  • 型號:

    PMBTA12

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-N+Darl

  • 性質:

    表面帖裝型 (SMD)

  • 封裝形式:

    貼片封裝

  • 極限工作電壓:

    20V

  • 最大電流允許值:

    0.5A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    3

  • 可代換的型號:

    MMBTA12,

  • 最大耗散功率:

    0.625W

  • 放大倍數(shù):

  • 圖片代號:

    H-15

  • vtest:

    20

  • htest:

    999900

  • atest:

    0.5

  • wtest:

    0.625

詳細參數(shù)

  • 型號:

    PMB

  • 制造商:

    Ericsson

供應商型號品牌批號封裝庫存備注價格
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更多PMB供應商 更新時間2025-4-24 16:00:00