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PLM74910QRGERQ1中文資料德州儀器數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

PLM74910QRGERQ1
廠(chǎng)商型號(hào)

PLM74910QRGERQ1

功能描述

LM749x0-Q1 Automotive Ideal Diode With Circuit Breaker, Undervoltage and Overvoltage Protection With Fault Output

絲印標(biāo)識(shí)

PLM74910Q

封裝外殼

VQFN

文件大小

3.65179 Mbytes

頁(yè)面數(shù)量

44 頁(yè)

生產(chǎn)廠(chǎng)商 Texas Instruments
企業(yè)簡(jiǎn)稱(chēng)

TI德州儀器

中文名稱(chēng)

美國(guó)德州儀器公司官網(wǎng)

原廠(chǎng)標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠(chǎng)下載

更新時(shí)間

2025-3-6 22:59:00

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PLM74910QRGERQ1規(guī)格書(shū)詳情

1 Features

? AEC-Q100 qualified for automotive applications

– Device temperature grade 1:

–40°C to +125°C ambient operating

temperature range

? 3-V to 65-V input range

? Reverse input protection down to –65 V

? Drives external back-to-back N-Channel MOSFETs

in common drain configuration

? Ideal diode operation with 10.5-mV A to C forward

voltage drop regulation

? Low reverse detection threshold (–3 mV) with fast

response (0.5 μs)

? 20-mA peak gate (DGATE) turnon current

? 2.6-A peak DGATE turnoff current

? Adjustable overcurrent and short circuit protection

? Analog current monitor output with 10 accuracy

(IMON)

? Adjustable overvoltage and undervoltage

protection

? Low 2.87-μA shutdown current (EN=Low)

? SLEEP mode with 6-μA current (EN=High,

SLEEP=Low)

? Meets automotive ISO7637 transient requirements

with a suitable TVS diode

? Available in space saving 24-Pin VQFN package

2 Applications

? Automotive battery protection

– ADAS domain controller

– Display ECU

– Automotive Audio: External amplifier

? Active ORing for redundant power

3 Description

The LM749x0-Q1 ideal diode controller drives and

controls external back to back N-Channel MOSFETs

to emulate an ideal diode rectifier with power path

ON/OFF control with over current and overvoltage

protection. The wide input supply of 3 V to 65 V allows

protection and control of 12-V and 24-V automotive

battery powered ECUs. The device can withstand and

protect the loads from negative supply voltages down

to –65 V. An integrated ideal diode controller (DGATE)

drives the first MOSFET to replace a Schottky diode

for reverse input protection and output voltage holdup.

With a second MOSFET in the power path the

device allows load disconnect (ON/OFF control) in

case of overcurrent and overvoltage events using

HGATE control. The device has integrated current

sense amplifier which provides accurate current

monitoring with adjustable over current and short

circuit thresholds. The device features an adjustable

overvoltage cut-off protection feature. The device

features a SLEEP mode which enables ultra low

quiescent current consumption (6 μA) and at the

same time providing refresh current to the always

ON loads when vehicle is in the parking state. The

LM749x0-Q1 has a maximum voltage rating of 65 V.

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