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PJU7NA60

600V N-Channel MOSFET

Features ?RDS(ON),VGS@10V,ID@3.5A

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

PJU7NA60

600V N-Channel MOSFET

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

PJU7NA60_T0_00001

600V N-Channel MOSFET

Features ?RDS(ON),VGS@10V,ID@3.5A

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

PJU7NA60_V01

600V N-Channel MOSFET

Features ?RDS(ON),VGS@10V,ID@3.5A

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

PJU7NA60-1

600V N-Channel MOSFET

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

P7NA60

N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR

DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS(

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

P7NA60FI

N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR

DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS(

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

PJD7NA60

600VN-ChannelMOSFET

Features ?RDS(ON),VGS@10V,ID@3.5A

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

PJD7NA60

600VN-ChannelMOSFET

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

PJF7NA60

600VN-ChannelMOSFET

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

PJF7NA60

600VN-ChannelMOSFET

Features ?RDS(ON),VGS@10V,ID@3.5A

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

PJP7NA60

600VN-ChannelMOSFET

Features ?RDS(ON),VGS@10V,ID@3.5A

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

PJP7NA60

600VN-ChannelMOSFET

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

STP7NA60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=7.2A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STP7NA60

N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR

DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS(

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP7NA60FI

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4.4A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STP7NA60FI

N-CHANNELENHANCEMENTMODEFASTPOWERMOSTRANSISTOR

DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS(

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

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PANJIT
23+
TO-251
10000
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PANJIT
22+
TO-251
6000
十年配單,只做原裝
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PANJIT
23+
TO-251
6000
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PANJIT
22+
TO-251
25000
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PANJIT
24+
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12300
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PANJIT/強(qiáng)茂
23+
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293898
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Hammond Manufacturing
2022+
6
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更多PJU7NA60供應(yīng)商 更新時(shí)間2025-1-16 14:30:00

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