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PJF60R290E

600V N-Channel Super Junction MOSFET

Features ?RDS(ON),VGS@10V,ID@6.5A

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

PJF60R290E_T0_00001

600V N-Channel Super Junction MOSFET

Features ?RDS(ON),VGS@10V,ID@6.5A

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

MME60R290P

600V0.29(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MME60R290PRH

600V0.29(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MME60R290PRH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.29Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MME60R290QRH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=13.8A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.29Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MME60R290QRH

600V0.29ohmN-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMF60R290P

600V0.29(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMF60R290PTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.29Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MMF60R290PTH

600V0.29(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMFT60R290P

600V0.29(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMFT60R290PC

600V0.29(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMFT60R290PCTH

600V0.29(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMFT60R290PCTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.29Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MMFT60R290PTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.29Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MMFT60R290PTH

600V0.29(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMP60R290P

600V0.29(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMP60R290PC

600V0.29(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMP60R290PCTH

600V0.29(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMP60R290PCTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=13A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.29Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

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更多PJF60R290E供應(yīng)商 更新時間2025-1-3 11:06:00