PHP120

AC POWER BUS VOLTAGE SUPPRESSOR

MECHANICALCHARACTERISTICS ?HermeticallySealedGlasstoMetalSub-Assemblies(PHP) ?Sub-AssembliesarePackagedinMoldedEpoxyCase(PIP) ?Weight46grams(Approximate) ?FlammabilityratingUL94V-0 ?DeviceMarking:Logo&PartNumber ?ScreeningAvailableUponRequest-ThePHP&

PHP120

ac power bus voltage suppressor

Description ThePHPandPIPSeriesofdevicesaredesignedinaccordancewithDOD-STD-1399,section300interfacestandardand MIL-STD704Aforshipboardsystems,electricalpowerandalternatingcurrent.Whenlargevoltagetransientsendanger voltagesensitivecomponents,thisseriesprovidesr

PHP125

P-channel enhancement mode MOS transistor

DESCRIPTION P-channelenhancementmodeMOStransistorinan8-pinplasticSO8(SOT96-1)package. FEATURES ?High-speedswitching ?Nosecondarybreakdown ?Verylowon-resistance. APPLICATIONS ?Motorandactuatordriver ?Powermanagement ?Synchronizedrectification.

PHP125N06LT

TrenchMOS transistor Logic level FET

GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP125N06LTissu

PHP125N06LT

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

PHP125N06T

TrenchMOS transistor Standard level FET

GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.ItisintendedforuseinDC-DCconvertersa

PHP125N06T

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

PHP129NQ04LT

N-channel TrenchMOS logic level FET

Description LogiclevelN-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS?technology. Features ■Logiclevelthreshold ■Verylowon-stateresistance. Applications ■Motors,lamps,solenoids ■Uninterruptiblepowersupplies ■DC-to-DCconverters ■

PHP129NQ04LT

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

PHP12N10E

PowerMOS transistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelope.ThedeviceisintendedforuseinSwitchedModePowerSupplies(SMPS),motorcontrol,welding,DC/DCandAC/DCconverters,andingeneralpurposeswitchingapplications.