PHB33NQ20T中文資料安世數(shù)據(jù)手冊PDF規(guī)格書

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product is designed and qualified for use in

computing, communications, consumer and industrial applications only.

1.2 Features and benefits

Higher operating power due to low

thermal resistance

Low conduction losses due to low

on-state resistance

Simple gate drive required due to low

gate charge

Suitable for high frequency

applications due to fast switching

characteristics

1.3 Applications

DC-to-DC primary side switching