PH5330E中文資料安世數(shù)據(jù)手冊PDF規(guī)格書

1.1 General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product is designed and qualified for use in

computing, communications, consumer and industrial applications only.

1.2 Features and benefits

Higher operating power due to low

thermal resistance

Low conduction losses due to low

on-state resistance

Suitable for logic level gate drive

sources

1.3 Applications

DC-to-DC convertors

Notebook computers

Portable equipment

Switched-mode power supplies