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PE15N80

N-Channel MOSFET uses advanced trench technology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半導體有限公司

HMS15N80F

N-ChannelSuperJunctionMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導體深圳市華之美半導體有限公司

IXFC15N80Q

HiPerFETISOPLUS220MOSFETQ-ClassElectricallyIsolatedBackSurface

IXYS

IXYS Corporation

IXFC15N80Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.65Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFH15N80

HiPerFETPowerMOSFETs

HiPerFET?PowerMOSFETs N-ChannelEnhancementMode Highdv/dt,Lowtrr,HDMOSTMFamily Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodrive

IXYS

IXYS Corporation

IXFH15N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFH15N80Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFH15N80Q

HiPerFETPowerMOSFETsQ-Class

Features ?IXYSadvancedlowQgprocess ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?Fastswitching ?MoldingepoxiesmeetUL94V-0 flammabilityclassification Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXFR15N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=13A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFR15N80Q

HiPerFETPowerMOSFETsISOPLUS247QClass

HiPerFET?PowerMOSFETsISOPLUS247?QClass(ElectricallyIsolatedBackSurface) N-ChannelEnhancementModeAvalancheRated,HighdV/dt LowGateChargeandCapacitances Features ?SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -

IXYS

IXYS Corporation

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SEMIONE
2022+
TO-220
50000
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SEMIONE
23+
TO220
98650
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SEMIONE
2022+
TO-220
30000
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進口原裝
23+
SOP-8
1200
優(yōu)勢庫存
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BUDINDUSTRIESRADIO
88
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Bud
22+
NA
80
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CURTIS
20+
連接器
293
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PANJIT(強茂)
23+
SOT23
7350
現(xiàn)貨供應,當天可交貨!免費送樣,原廠技術支持!!!
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PANJIT
2020+
SOT-23-2
880000
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PANJ
2447
SMD
100500
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更多PE15N80供應商 更新時間2025-3-23 14:02:00