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PDTD113E_SER

NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ

Features *Built-inbiasresistors *Simplifiescircuitdesign *500mAoutputcurrentcapability *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PDTD113EK

NPN500mA,50Vresistor-equippedtransistors;R1=1k-ohm,R2=1k-ohm

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTD113EK

LowVCEsat(BISS)transistors

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTD113EK

NPN500mA,50Vresistor-equippedtransistors;R1=1k廓,R2=1k廓

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PDTD113EK

NPN500mA,50Vresistor-equippedtransistors;R1=1kΩ,R2=1kΩ

Features *Built-inbiasresistors *Simplifiescircuitdesign *500mAoutputcurrentcapability *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PDTD113EQA

50V,500mANPNresistor-equippedtransistors

Generaldescription NPNResistor-EquippedTransistor(RET)familyinaleadlessultrasmallDFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisibleandsolderablesidepads. Featuresandbenefits ■500mAoutputcurrentcapability ■Reducedpickandplacecosts ■Built

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PDTD113EQA

50V,500mANPNresistor-equippedtransistors

Featuresandbenefits ?500mAoutputcurrentcapability ?Built-inbiasresistors ??10resistorratiotolerance ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducedpickandplacecosts ?Lowpackageheightof0.37mm ?SuitableforAutomaticOptical Inspection(AOI)ofsold

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PDTD113EQA

50V,500mAPNPresistor-equippedtransistors

Featuresandbenefits ?500mAoutputcurrentcapability ?Built-inbiasresistors ??10resistorratiotolerance ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducedpickandplacecosts ?Lowpackageheightof0.37mm ?SuitableforAutomaticOptical Inspection(AOI)ofsold

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PDTD113EQA_SER

50V,500mANPNresistor-equippedtransistors

Featuresandbenefits ?500mAoutputcurrentcapability ?Built-inbiasresistors ??10resistorratiotolerance ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducedpickandplacecosts ?Lowpackageheightof0.37mm ?SuitableforAutomaticOptical Inspection(AOI)ofsold

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PDTD113ES

NPN500mA,50Vresistor-equippedtransistors;R1=1k-ohm,R2=1k-ohm

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTD113ES

NPN500mA,50Vresistor-equippedtransistors;R1=1k廓,R2=1k廓

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PDTD113ES

NPN500mA,50Vresistor-equippedtransistors;R1=1kΩ,R2=1kΩ

Features *Built-inbiasresistors *Simplifiescircuitdesign *500mAoutputcurrentcapability *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PDTD113ET

LowVCEsat(BISS)transistors

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTD113ET

NPN500mA,50Vresistor-equippedtransistors;R1=1k-ohm,R2=1k-ohm

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTD113ET

NPN500mA,50Vresistor-equippedtransistors;R1=1k廓,R2=1k廓

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PDTD113ET

NPN500mA,50Vresistor-equippedtransistors;R1=1kΩ,R2=1kΩ

Features *Built-inbiasresistors *Simplifiescircuitdesign *500mAoutputcurrentcapability *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PDTD113EU

500mA,50VNPNresistor-equippedtransistors

Generaldescription NPNResistor-EquippedTransistor(RET)familyinaverysmallSOT323(SC-70)Surface-MountedDevice(SMD)plasticpackage. Features ■500mAoutputcurrentcapability ■±10resistorratiotolerance ■Built-inbiasresistors ■AEC-Q101qualified ■Simplifiescircuitd

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PDTD113EU

500mA,50VNPNresistor-equippedtransistors

Features ?500mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reducescomponentcount ??10resistorratiotolerance ?AEC-Q101qualified ?Hightemperatureapplications upto175°C

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PDTD113EU

500mA,50VPNPresistor-equippedtransistors

Features ?500mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reducescomponentcount ??10resistorratiotolerance ?AEC-Q101qualified ?Hightemperatureapplications upto175°C

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PDTD113Z

50V,500mANPNresistor-equippedtransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

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PHILIPS
2020+
SOT23
350000
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NXP/恩智浦
21+
SOT23-3
19000
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PHILIPS/飛利浦
1535+
21000
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NXP/恩智浦
23+
SOT23-3
89630
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PHILIPS/飛利浦
23+
21000
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NXP
2024+
SOT346
188600
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NXP
22+
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45000
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NXP USA Inc.
2022+
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38550
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NXP
23+
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8000
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NXP USA Inc.
24+
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9350
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更多PDTD113E_SER供應(yīng)商 更新時(shí)間2024-11-6 9:00:00

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