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PDTC143T_SER

NPN resistor-equipped transistors R1 = 4.7 kΩ, R2 = open

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitapplications. DESCRIPTION NPNresistor-equippedtransistor(see“S

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PDTC143T_SERIES

NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitapplications.

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PDTC143TE

NPNresistor-equippedtransistors;R1=4.7kOHM,R2=open

DESCRIPTION NPNresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PDTC143TE

NPNresistor-equippedtransistors;R1=4.7kΩ,R2=open

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitapplications.

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PDTC143TE

PNPresistor-equippedtransistors;R1=4.7kΩ,R2=open

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PDTC143TE

NPNresistor-equippedtransistorsR1=4.7kΩ,R2=open

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitapplications. DESCRIPTION NPNresistor-equippedtransistor(see“S

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PDTC143TEF

NPNresistor-equippedtransistors;R1=4.7kOHM,R2=open

DESCRIPTION NPNresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PDTC143TEF

NPNresistor-equippedtransistors;R1=4.7kΩ,R2=open

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitapplications.

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PDTC143TEF

PNPresistor-equippedtransistors;R1=4.7kΩ,R2=open

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

PDTC143TEF

NPNresistor-equippedtransistorsR1=4.7kΩ,R2=open

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitapplications. DESCRIPTION NPNresistor-equippedtransistor(see“S

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

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