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PDTC123EM

NPN resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓

DESCRIPTION NPNresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

PDTC123EM

NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PDTC123EM

PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PDTC123EM

NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 2.2 k-ohm

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTC123EMB

NPN resistor-equipped transistor; R1 = 2.2 k廓, R2 = 2.2 k廓

Generaldescription NPNResistor-EquippedTransistor(RET)inaleadlessultrasmallDFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PDTA123EMB. Featuresandbenefits ■100mAoutputcurrentcapability ■Reducescomponentcount ■Built-inbiasresistors ■

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PDTC123EM,315

包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 封裝/外殼:SC-101,SOT-883 類別:分立半導體產(chǎn)品 晶體管 - 雙極(BJT)- 單,預偏置 描述:TRANS PREBIAS NPN 50V DFN1006-3

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PDTC123EMB,315

包裝:卷帶(TR) 封裝/外殼:3-XFDFN 類別:分立半導體產(chǎn)品 晶體管 - 雙極(BJT)- 單,預偏置 描述:TRANS PREBIAS NPN 50V DFN1006B-3

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PDTC123ES

NPNresistor-equippedtransistors;R1=2.2k廓,R2=2.2k廓

DESCRIPTION NPNresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

PDTC123ES

NPNresistor-equippedtransistors;R1=2.2k-ohm,R2=2.2k-ohm

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTC123ES

NPNresistor-equippedtransistors;R1=2.2kΩ,R2=2.2kΩ

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PDTC123ES

PNPresistor-equippedtransistors;R1=2.2kΩ,R2=2.2kΩ

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PDTC123ET

NPNresistor-equippedtransistor

DESCRIPTION PNPresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandampl

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTC123ET

LowVCEsat(BISS)transistors

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTC123ET

NPNresistor-equippedtransistors;R1=2.2k廓,R2=2.2k廓

DESCRIPTION NPNresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

PDTC123ET

NPNresistor-equippedtransistors;R1=2.2k-ohm,R2=2.2k-ohm

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTC123ET

NPNresistor-equippedtransistors;R1=2.2kΩ,R2=2.2kΩ

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PDTC123ET

PNPresistor-equippedtransistors;R1=2.2kΩ,R2=2.2kΩ

FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplification ?Inverterandinterfacecircuits ?Circuitdriver.

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PDTC123EU

LowVCEsat(BISS)transistors

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTC123EU

NPNresistor-equippedtransistors;R1=2.2k-ohm,R2=2.2k-ohm

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PDTC123EU

NPNresistor-equippedtransistors;R1=2.2k廓,R2=2.2k廓

DESCRIPTION NPNresistor-equippedtransistor(see“Simplifiedoutline,symbolandpinning”forpackagedetails). FEATURES ?Built-inbiasresistors ?Simplifiedcircuitdesign ?Reductionofcomponentcount ?Reducedpickandplacecosts. APPLICATIONS ?Generalpurposeswitchingandamplif

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

詳細參數(shù)

  • 型號:

    PDTC123EM

  • 功能描述:

    開關(guān)晶體管 - 偏壓電阻器 TRANS RET TAPE-7

  • RoHS:

  • 制造商:

    ON Semiconductor

  • 晶體管極性:

    NPN/PNP

  • 安裝風格:

    SMD/SMT

  • 封裝/箱體:

    直流集電極/Base Gain hfe

  • Min:

    200 mA

  • 最大工作頻率:

    集電極—發(fā)射極最大電壓

  • VCEO:

    50 V

  • 集電極連續(xù)電流:

    150 mA

  • 功率耗散:

    200 mW

  • 封裝:

    Reel

供應商型號品牌批號封裝庫存備注價格
NEXPERIA
22+
原廠
32000
詢價
PHILIPS
2023+
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
NEXPERIA
21+
SOT883
6000
原裝正品
詢價
NEXPERIA/安世
2122+
SOT883
10990
全新原裝正品現(xiàn)貨,假一賠十
詢價
NEXPERIA/安世
22+
SOT883
8900
英瑞芯只做原裝正品!!!
詢價
NEXPERIA/安世
23+
SMT
98311
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
NEXPERIA/安世
22+
SOT883
50000
原裝正品.假一罰十
詢價
NEXPERIA/安世
22+
SOT883
10990
原裝正品
詢價
NEXPERIA/安世
24+
SOT883
300000
全新原裝現(xiàn)貨庫存
詢價
NEXPERIA/安世
2023+
SOT883
48000
AI智能識別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站
詢價
更多PDTC123EM供應商 更新時間2024-11-6 9:03:00