Description

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance makes it an ideal solution for portable radio.

Features

■ Excellent thermal stability

■ Common source configuration

■ POUT = 8 W with 11.5dB gain @ 500 MHz/7.5 V

■ New RF plastic package

PD54008TR-E屬于分立半導(dǎo)體產(chǎn)品 > 晶體管 - FET，MOSFET - 射頻。意法半導(dǎo)體（ST）集團(tuán)制造生產(chǎn)的PD54008TR-E晶體管 - FET，MOSFET - 射頻射頻晶體管、FET 和 MOSFET 是具有三個端子的半導(dǎo)體器件，器件中電流受電場控制。該系列器件用于涉及射頻的設(shè)備。用于放大或切換信號或功率的晶體管類型包括：E-pHEMT、LDMOS、MESFET、N 溝道、P 溝道、pHEMT、碳化硅、2 N 溝道和 4 N 溝道。