首頁 >PBSS4350S>規(guī)格書列表

    零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

    PBSS4350S

    50 V low VCEsat NPN transistor

    DESCRIPTION NPNlowVCEsattransistorinaSOT54plasticpackage.PNPcomplement:PBSS5350S. FEATURES ?Highpowerdissipation(830mW) ?Ultralowcollector-emittersaturationvoltage ?3Acontinuouscurrent ?Highcurrentswitching ?Improveddevicereliabilityduetoreducedheatgenerat

    PhilipsNXP Semiconductors

    飛利浦荷蘭皇家飛利浦

    PBSS4350SPN

    50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor

    Generaldescription PNP/PNPdoublelowVCEsatBreakthroughInSmallSignal(BISS)transistorinamediumpowerSurface-MountedDevice(SMD)plasticpackage. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Highcollectorcurrentgain

    nxpNXP Semiconductors

    恩智浦恩智浦半導(dǎo)體公司

    PBSS4350SPN

    50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor

    Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

    NEXPERIANexperia B.V. All rights reserved

    安世安世半導(dǎo)體(中國)有限公司

    PBSS4350SPN

    50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor

    Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

    NEXPERIANexperia B.V. All rights reserved

    安世安世半導(dǎo)體(中國)有限公司

    PBSS4350SS

    50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor

    Generaldescription PNP/PNPdoublelowVCEsatBreakthroughInSmallSignal(BISS)transistorinamediumpowerSurface-MountedDevice(SMD)plasticpackage. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Highcollectorcurrentgain

    nxpNXP Semiconductors

    恩智浦恩智浦半導(dǎo)體公司

    PBSS4350SS

    50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor

    Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

    NEXPERIANexperia B.V. All rights reserved

    安世安世半導(dǎo)體(中國)有限公司

    PBSS4350SS

    50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor

    Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

    NEXPERIANexperia B.V. All rights reserved

    安世安世半導(dǎo)體(中國)有限公司

    PBSS4350SS.115

    NPN/NPN double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package.

    Generaldescription PNP/PNPdoublelowVCEsatBreakthroughInSmallSignal(BISS)transistorinamediumpowerSurface-MountedDevice(SMD)plasticpackage. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Highcollectorcurrentgain(

    nxpNXP Semiconductors

    恩智浦恩智浦半導(dǎo)體公司

    PBSS4350SPN_15

    50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor

    PhilipsNXP Semiconductors

    飛利浦荷蘭皇家飛利浦

    PBSS4350S,126

    包裝：散裝 封裝/外殼：TO-226-3，TO-92-3（TO-226AA）成形引線 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS NPN 50V 3A TO92-3

    nxpNXP Semiconductors

    恩智浦恩智浦半導(dǎo)體公司

    PBSS4350SA_R1_00001

    包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 封裝/外殼：TO-236-3，SC-59，SOT-23-3 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS NPN 50V 3A SC59

    Panjit International Inc.

    Panjit International Inc.

    Panjit International Inc.

    詳細(xì)參數(shù)

    • 型號：

      PBSS4350S

    • 功能描述：

      兩極晶體管 - BJT TRANS BISS AMMO LARGE

    • RoHS：

      否

    • 制造商：

      STMicroelectronics

    • 晶體管極性：

      PNP 集電極—基極電壓

    • VCBO：

      集電極—發(fā)射極最大電壓

    • VCEO：

      - 40 V 發(fā)射極 - 基極電壓

    • VEBO：

      - 6 V

    • 增益帶寬產(chǎn)品fT：

      直流集電極/Base Gain hfe

    • Min：

      100 A

    • 安裝風(fēng)格：

      SMD/SMT

    • 封裝/箱體：

      PowerFLAT 2 x 2

    供應(yīng)商型號品牌批號封裝庫存備注價格
    PHI
    05+
    原廠原裝
    50051
    只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
    		 詢價
    ph
    24+
    N/A
    6980
    原裝現(xiàn)貨,可開13%稅票
    		 詢價
    PHILIPS
    18+
    PHILIPS
    85600
    保證進(jìn)口原裝可開17%增值稅發(fā)票
    		 詢價
    PHILIPS
    2023+
    80000
    一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
    		 詢價
    PHILIPS/飛利浦
    1535+
    5000
    		詢價
    NEXPERIA/安世
    2122+
    SOT54
    60000
    全新原裝正品現(xiàn)貨,假一賠十
    		 詢價
    NEXPERIA/安世
    22+
    SOT54
    18000
    原裝正品
    		 詢價
    ph
    2023+
    原廠封裝
    50000
    原裝現(xiàn)貨
    		 詢價
    NEXPERIA/安世
    24+
    SOT54
    860000
    明嘉萊只做原裝正品現(xiàn)貨
    		 詢價
    PHILIPS/飛利浦
    23+
    5000
    全新原裝，歡迎來電咨詢
    		 詢價
    更多PBSS4350S供應(yīng)商 更新時間2024-11-8 13:41:00

    相關(guān)規(guī)格書

    更多

    相關(guān)庫存

    更多