PBSS4260PAN中文資料安世數(shù)據(jù)手冊PDF規(guī)格書

1. General description

NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless

medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

NPN/PNP complement: PBSS4260PANP. PNP/PNP complement: PBSS5260PAP.

2. Features and benefits

? Very low collector-emitter saturation voltage VCEsat

? High collector current capability IC and ICM

? High collector current gain hFE at high IC

? Reduced Printed-Circuit Board (PCB) requirements

? High efficiency due to less heat generation

? AEC-Q101 qualified

3. Applications

? Load switch

? Battery-driven devices

? Power management

? Charging circuits

? Power switches (e.g. motors, fans)