首頁(yè) >PBSS4041NX>規(guī)格書(shū)列表
| 零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
PBSS4041NX | 60 V, 6.2 A NPN low VCEsat (BISS) transistor Technicalsummary NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinamediumpowerandflatleadSOT89(SC-62)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS4041PX. Featuresandbenefits ?Verylowcollector-emittersaturationvoltageVCEsat ?Highcollector | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司 | NEXPERIA | |
60 V, 6.2 A NPN low VCEsat (BISS) transistor | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 封裝/外殼：TO-243AA 類(lèi)別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個(gè) 描述：TRANS NPN 60V 6.2A SOT89 | Nexperia USA Inc. Nexperia USA Inc. | Nexperia USA Inc. | ||
60V,7ANPNlowVCEsat(BISS)transistor Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT223(SC-73)mediumpowerSurface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS4041PZ. Featuresandbenefits ■Verylowcollector-emittersaturation voltageVCEsat ■Highcollectorcurren | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司 | NEXPERIA | ||
60V,7ANPNlowVCEsattransistor 1.Generaldescription NPNlowVCEsattransistorinaSOT223(SC-73)mediumpowerSurface-MountedDevice(SMD) plasticpackage. PNPcomplement:PBSS4041PZ-Q 2.Featuresandbenefits ?Verylowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Hig | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司 | NEXPERIA | ||
60V,7ANPNlowVCEsattransistor 1.Generaldescription NPNlowVCEsattransistorinaSOT223(SC-73)mediumpowerSurface-MountedDevice(SMD) plasticpackage. PNPcomplement:PBSS4041PZ-Q 2.Featuresandbenefits ?Verylowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Hig | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司 | NEXPERIA | ||
60V,2.7APNPlowVCEsat(BISS)transistor Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT23(TO-236AB)smallSurface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBSS4041NT. Featuresandbenefits ■Verylowcollector-emittersaturationvoltageVCEsat ■Highcollectorcurrentcapabil | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
60V,2.7APNPlowVCEsat(BISS)transistor Featuresandbenefits *Verylowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highenergyefficiencyduetolessheatgeneration *AEC-Q101qualified *SmallerrequiredPrinted-CircuitBoard(PCB) | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司 | NEXPERIA | ||
60V,2.7APNPlowVCEsattransistor 1.Generaldescription PNPlowVCEsattransistorinaSOT23smallSurface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBSS4041NT-Q 2.Featuresandbenefits ?Verylowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Highcollectorcurre | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司 | NEXPERIA | ||
60V,5APNPlowVCEsattransistor Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinamediumpowerandflatleadSOT89(SC-62)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBSS4041NX. Featuresandbenefits ■Verylowcollector-emittersaturationvoltageVCEsat ■Highcollect | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
60V,5APNPlowVCEsat(BISS)transistor Featuresandbenefits *Verylowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highenergyefficiencyduetolessheatgeneration *AEC-Q101qualified *SmallerrequiredPrinted-CircuitBoard(PCB) | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司 | NEXPERIA | ||
60V,5.7APNPlowVCEsat(BISS)transistor Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT223(SC-73)mediumpowerSurface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBSS4041NZ. Featuresandbenefits ■Verylowcollector-emittersaturationvoltageVCEsat ■Highcollectorcurrentca | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
60V,5.7APNPlowVCEsat(BISS)transistor Featuresandbenefits *Verylowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highenergyefficiencyduetolessheatgeneration *AEC-Q101qualified *SmallerrequiredPrinted-CircuitBoard(PCB) | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司 | NEXPERIA | ||
60V,5.7APNPlowVCEsattransistor 1.Generaldescription PNPlowVCEsattransistorinaSOT223(SC-73)mediumpowerSurface-MountedDevice(SMD) plasticpackage. NPNcomplement:PBSS4041NZ-Q 2.Featuresandbenefits ?Verylowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Hig | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司 | NEXPERIA | ||
60V,5.7APNPlowVCEsattransistor 1.Generaldescription PNPlowVCEsattransistorinaSOT223(SC-73)mediumpowerSurface-MountedDevice(SMD) plasticpackage. NPNcomplement:PBSS4041NZ-Q 2.Featuresandbenefits ?Verylowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Hig | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司 | NEXPERIA | ||
60V,6.7ANPN/NPNlowVCEsat(BISS)transistor | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
60V,6.7ANPN/NPNlowVCEsat(BISS)transistor Featuresandbenefits *Verylowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltr | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司 | NEXPERIA | ||
60V,5.9APNP/PNPlowVCEsat(BISS)transistor Generaldescription PNP/PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT96-1(SO8)mediumpowerSurface-MountedDevice(SMD)plasticpackage. Featuresandbenefits ■Verylowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Hig | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司 | NEXPERIA | ||
60VNPN/PNPlowVCEsat(BISS)transistor Generaldescription NPN/PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT96-1(SO8)mediumpowerSurface-MountedDevice(SMD)plasticpackage. Featuresandbenefits ■Verylowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Hig | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
60VNPN/PNPlowVCEsat(BISS)transistor Featuresandbenefits *Verylowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltr | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司 | NEXPERIA |
詳細(xì)參數(shù)
- 型號(hào)：
PBSS4041NX
- 制造商：
NXP Semiconductors
- 功能描述：
TRANSISTORNPN60V6.2ASOT89
- 功能描述：
TRANSISTOR,NPN,60V,6.2A,SOT89
- 功能描述：
TRANSISTOR,NPN,60V,6.2A,SOT89; Transistor
- Polarity：
NPN; Collector Emitter Voltage
- V(br)ceo：
60V; Transition Frequency Typ
- ft：
130MHz; Power Dissipation
- Pd：
600mW; DC Collector
- Current：
6.2A; DC Current Gain
- hFE：
500; No. of
- Pins：
3 ;RoHS
- Compliant：
Yes
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
NXP(恩智浦) |
23+ |
SOT89 |
10524 |
原裝正品,現(xiàn)貨庫(kù)存,1小時(shí)內(nèi)發(fā)貨 |
詢(xún)價(jià) | ||
NEXPERIA/安世 |
2019+ |
SOT-89 |
78550 |
原廠(chǎng)渠道 可含稅出貨 |
詢(xún)價(jià) | ||
NXP(恩智浦) |
23+ |
N/A |
12000 |
一級(jí)代理,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力 |
詢(xún)價(jià) | ||
NXP/恩智浦 |
24+ |
SOT89 |
1000 |
原裝現(xiàn)貨,有上庫(kù)存就有貨,假一賠十 |
詢(xún)價(jià) | ||
NXP |
24+ |
SOT89 |
10000 |
只做原裝 有掛有貨 假一賠十 |
詢(xún)價(jià) | ||
NXP(恩智浦) |
23+ |
SOT89 |
21316 |
正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊 |
詢(xún)價(jià) | ||
NEXPERIA/安世 |
24+ |
SOT-89 |
503524 |
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系 |
詢(xún)價(jià) | ||
NXP |
2024+ |
N/A |
70000 |
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng) |
詢(xún)價(jià) | ||
NEXPERIA/安世 |
23+ |
SOT-89 |
1000 |
專(zhuān)業(yè)供應(yīng)MOS/LDO/晶體管/有大量?jī)r(jià)格低 |
詢(xún)價(jià) | ||
Nexperia |
18+ |
NA |
3830 |
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)QQ3171516190 |
詢(xún)價(jià) |
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