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PBPC302

3.0ABRIDGERECTIFIER

Features ?HighCurrentCapability ?SurgeOverloadRatingto50APeak ?HighCaseDielectricStrengthof1500V ?IdealforPrintedCircuitBoardApplication ?ULListedUnderRecognizedComponentIndex,FileNumberE94661

DIODES

Diodes Incorporated

PBSS302ND

40V,4ANPNlowVCEsat(BISS)transistor

Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT457(SC-74)smallSurface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS302PD. Features ■Ultralowcollector-emittersaturationvoltageVCEsat ■4AcontinuouscollectorcurrentcapabilityI

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBSS302ND

40V,4ANPNlowVCEsat(BISS)transistor

1.1Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT457(SC-74) smallSurface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS302PD. 1.2Features *Ultralowcollector-emittersaturationvoltageVCEsat *4Acontinuouscollectorcurrentc

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS302NX

20V,5.3ANPNlowVCEsat(BISS)transistor

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

PBSS302NX

20V,5.3ANPNlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS302NZ

20V,5.8ANPNlowVCEsat(BISS)transistor

Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS302PZ. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Hig

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS302NZ

20V,5.8ANPNlowVCEsattransistor

1.Generaldescription NPNlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS302PZ 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Highcollectorcur

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS302NZ-Q

20V,5.8ANPNlowVCEsattransistor

1.Generaldescription NPNlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Highcollectorcurrentgain(hFE)athighIC

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS302PD

40VPNPlowVCEsat(BISS)transistor

Generaldescription PNPlowVCEsatBreakthroughinSmallSignal(BISS)singlebipolarPNPtransistorinaSOT457(SC-74)SMDplasticpackage. NPNcomplement:PBSS302ND Features ■Ultralowcollector-emittersaturationvoltageVCEsat ■4AcontinuouscollectorcurrentcapabilityIC(DC) ■Up

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS302PD

40V,4APNPlowVCEsat(BISS)transistor

Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT457(SC-74)smallSurface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBSS302ND. Features ■Ultralowcollector-emittersaturationvoltageVCEsat ■4AcontinuouscollectorcurrentcapabilityI

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào)：

    PA-302

  • 制造商：

    Monacor International

  • 功能描述：

    Bulk

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CENTRALAB
4
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PA
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N/A
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更多PA-302供應(yīng)商 更新時(shí)間2025-3-19 16:20:00

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