SN74CBTD1G384DBVT

Marking：P8DJ；Package：SOT-23；SINGLE FET BUS SWITCH WITH LEVEL SHIFTING

FEATURES ·5-WSwitchConnectionBetweenTwoPorts ·TTL-CompatibleControlInputLevels ·Latch-UpPerformanceExceeds100mAPer JESD78,ClassII DESCRIPTION/ORDERINGINFORMATION TheSN74CBTD1G384featuresasinglehigh-speedlineswitch.Theswitchisdisabledwhentheoutput-enable (

SN74CBTD1G384DBVT.A

Marking：P8DJ；Package：SOT-23；SINGLE FET BUS SWITCH WITH LEVEL SHIFTING

FEATURES ·5-WSwitchConnectionBetweenTwoPorts ·TTL-CompatibleControlInputLevels ·Latch-UpPerformanceExceeds100mAPer JESD78,ClassII DESCRIPTION/ORDERINGINFORMATION TheSN74CBTD1G384featuresasinglehigh-speedlineswitch.Theswitchisdisabledwhentheoutput-enable (

STP80NF03L

Marking：P80NF03L；Package：TO-220；N-CHANNEL 30V - 0.004 - 80A TO-220 STripFET II MOSFET

DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique“SingleFeatureSize?”stripbasedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemark

STP80NF10FP

Marking：P80NF10FP；Package：TO-220FP；N-channel 100V - 0.012? - 38A - TO-220FP Low gate charge STripFET? II Power MOSFET

Description ThisPowerMOSFETseriesrealizedwith STMicroelectronicsuniqueSTripFETprocesshas specificallybeendesignedtominimizeinput capacitanceandgatecharge.Itistherefore suitableasprimaryswitchinadvancedhighefficiencyisolatedDC-DCconvertersforTelecom andComputer

STP85NF55_V01

Marking：P85NF55；Package：TO-220；Automotive-grade N-channel 55 V, 6.2 mΩ typ., 80 A, STripFET? II Power MOSFETs in D2PAK and TO-220 packages

Features ?AEC-Q101qualified ?Exceptionaldv/dtcapability ?100avalanchetested ?Lowgatecharge Applications ?Switchingapplications Description ThesePowerMOSFETshavebeendevelopedusingSTMicroelectronics’unique STripFETprocess,whichisspecificallydesignedtominimize

STP8NM60

Marking：P8NM60；Package：TO-220；N-channel 650 V@Tjmax, 0.9 Ω, 8 A MDmesh? Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK

Description TheMDmesh?isanewrevolutionaryPower MOSFETtechnologythatassociatesthemultiple drainprocesswiththecompany’sPowerMESH? horizontallayout.Theresultingproducthasan outstandinglowon-resistance,impressivelyhigh dv/dtandexcellentavalanchecharacteristics.The

STP8NM60FP

Marking：P8NM60FP；Package：TO-220FP；N-channel 650 V@Tjmax, 0.9 Ω, 8 A MDmesh? Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK

Description TheMDmesh?isanewrevolutionaryPower MOSFETtechnologythatassociatesthemultiple drainprocesswiththecompany’sPowerMESH? horizontallayout.Theresultingproducthasan outstandinglowon-resistance,impressivelyhigh dv/dtandexcellentavalanchecharacteristics.The

TLP864

Marking：P864；Package：11-13K1；TOSHIBA PHOTO-INTERRUPTERS INFRARED LED PHOTODARLINGTON TRANSISTOR

VCRS,COMPACTDISCPLAYERS COPIERS,FAXMACHINES,PRINTERS VENDINGMACHINES,TICKETMACHINES VARIOUSPOSITIONDETECTIONSENSORS TheTLP864andTLP865photo-interrupterscombinesGaAsinfraredLEDwithahigh-sensitivitySiphotodarlingtontransistor.Theyexhibitahgihcurrenttransferratio,

TLP865

Marking：P865；Package：11-13M1；TOSHIBA PHOTO-INTERRUPTERS INFRARED LED PHOTODARLINGTON TRANSISTOR

VCRS,COMPACTDISCPLAYERS COPIERS,FAXMACHINES,PRINTERS VENDINGMACHINES,TICKETMACHINES VARIOUSPOSITIONDETECTIONSENSORS TheTLP864andTLP865photo-interrupterscombinesGaAsinfraredLEDwithahigh-sensitivitySiphotodarlingtontransistor.Theyexhibitahgihcurrenttransferratio,

ESD01811CDNH

Marking：P81；Package：DFN1006；BIDIRECTIONAL TVS DIODE