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P25Q21U-NXH-IR

UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q21U/11U/06UisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導(dǎo)體(上海)股份有限公司

P25Q21U-NXH-IT

UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q21U/11U/06UisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導(dǎo)體(上海)股份有限公司

P25Q21U-NXH-IW

UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q21U/11U/06UisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導(dǎo)體(上海)股份有限公司

P25Q21U-NXH-IY

UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q21U/11U/06UisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導(dǎo)體(上海)股份有限公司

P25Q21U-NXH-KR

UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q21U/11U/06UisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導(dǎo)體(上海)股份有限公司

P25Q21U-NXH-KT

UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q21U/11U/06UisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導(dǎo)體(上海)股份有限公司

P25Q21U-NXH-KW

UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q21U/11U/06UisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導(dǎo)體(上海)股份有限公司

P25Q21U-NXH-KY

UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q21U/11U/06UisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導(dǎo)體(上海)股份有限公司

P25Q21U-SSH-IR

UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q21U/11U/06UisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導(dǎo)體(上海)股份有限公司

P25Q21U-SSH-IT

UltraLowPower,2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet

2Description The P25Q21U/11U/06UisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthedev

PUYAPuran Semiconductor (Shanghai) Co., Ltd

普冉股份普冉半導(dǎo)體(上海)股份有限公司

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