首頁 >P25Q10HA-WXH-KR>規(guī)格書列表
| 零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
P25Q10HA-WXH-KR | Ultra Low Power, 4M/2M/1M/512K-bit Serial Multi I/O Flash Memory | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA | |
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemory | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemory | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉普冉半導(dǎo)體(上海)股份有限公司 | PUYA |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
PUYA/普冉 |
2024+ |
SOP-8 |
188600 |
全新原廠原裝正品現(xiàn)貨 歡迎咨詢 |
詢價(jià) | ||
PUYA/普冉 |
2023 |
TSSOP8盤 |
3392 |
原廠代理渠道,正品保障 |
詢價(jià) | ||
PURA |
23+ |
SOP8 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
PURA |
2022 |
SOP8 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價(jià) | ||
PURA |
23+ |
SOP8 |
15275 |
一級(jí)代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、 |
詢價(jià) | ||
PURA |
21+ |
SOP8 |
9866 |
詢價(jià) | |||
PURA |
24+23+ |
SOP8 |
12580 |
16年現(xiàn)貨庫存供應(yīng)商終端BOM表可配單提供樣品 |
詢價(jià) | ||
PURA |
22+ |
SOP8 |
34430 |
鄭重承諾只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
PURA |
23+ |
SOP-8 |
89630 |
當(dāng)天發(fā)貨全新原裝現(xiàn)貨 |
詢價(jià) | ||
PURA |
23+ |
NA/ |
15050 |
原廠直銷,現(xiàn)貨供應(yīng),賬期支持! |
詢價(jià) |
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