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STD10P6F6

P-channel60V,0.15廓typ.,10ASTripFET??VIDeepGATE??PowerMOSFETinDPAKandTO-220packages

Description ThesedevicesareP-channelPowerMOSFETsdevelopedusingtheSTripFET?F6technology,withanewtrenchgatestructure.TheresultingPowerMOSFETsexhibitverylowRDS(on)inallpackages. Features ?Verylowon-resistance ?Verylowgatecharge ?Highavalancheruggedness ?Lo

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STD10P6F6

P-channel-60V,0.13Ωtyp.,-10ASTripFET?F6PowerMOSFETsinDPAK,TO-220FP,TO-220andIPAKpackages

Features ?Verylowon-resistance ?Verylowgatecharge ?Highavalancheruggedness ?Lowgatedrivepowerloss Applications ?Switchingapplications

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STF10P6F6

P-channel-60V,0.13Ωtyp.,-10ASTripFET?F6PowerMOSFETsinDPAK,TO-220FP,TO-220andIPAKpackages

Features ?Verylowon-resistance ?Verylowgatecharge ?Highavalancheruggedness ?Lowgatedrivepowerloss Applications ?Switchingapplications Description ThesedevicesareP-channelPowerMOSFETs developedusingtheSTripFET?F6technology, withanewtrenchgatestructure.

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STF10P6F6

P-channel-60V,0.13Ωtyp.,-10ASTripFET?F6PowerMOSFETsinDPAK,TO-220FP,TO-220andIPAKpackages

Features ?Verylowon-resistance ?Verylowgatecharge ?Highavalancheruggedness ?Lowgatedrivepowerloss Applications ?Switchingapplications

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP10P6F6

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

STP10P6F6

P-channel60V,0.15廓typ.,10ASTripFET??VIDeepGATE??PowerMOSFETinDPAKandTO-220packages

Description ThesedevicesareP-channelPowerMOSFETsdevelopedusingtheSTripFET?F6technology,withanewtrenchgatestructure.TheresultingPowerMOSFETsexhibitverylowRDS(on)inallpackages. Features ?Verylowon-resistance ?Verylowgatecharge ?Highavalancheruggedness ?Lo

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP10P6F6

P-channel-60V,0.13Ωtyp.,-10ASTripFET?F6PowerMOSFETsinDPAK,TO-220FP,TO-220andIPAKpackages

Features ?Verylowon-resistance ?Verylowgatecharge ?Highavalancheruggedness ?Lowgatedrivepowerloss Applications ?Switchingapplications

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STP10P6F6

P-channel-60V,0.13Ωtyp.,-10ASTripFET?F6PowerMOSFETsinDPAK,TO-220FP,TO-220andIPAKpackages

Features ?Verylowon-resistance ?Verylowgatecharge ?Highavalancheruggedness ?Lowgatedrivepowerloss Applications ?Switchingapplications Description ThesedevicesareP-channelPowerMOSFETs developedusingtheSTripFET?F6technology, withanewtrenchgatestructure.

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STU10P6F6

P-channel-60V,0.13Ωtyp.,-10ASTripFET?F6PowerMOSFETsinDPAK,TO-220FP,TO-220andIPAKpackages

Features ?Verylowon-resistance ?Verylowgatecharge ?Highavalancheruggedness ?Lowgatedrivepowerloss Applications ?Switchingapplications

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STU10P6F6

P-channel-60V,0.13Ωtyp.,-10ASTripFET?F6PowerMOSFETsinDPAK,TO-220FP,TO-220andIPAKpackages

Features ?Verylowon-resistance ?Verylowgatecharge ?Highavalancheruggedness ?Lowgatedrivepowerloss Applications ?Switchingapplications Description ThesedevicesareP-channelPowerMOSFETs developedusingtheSTripFET?F6technology, withanewtrenchgatestructure.

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ST/意法
23+
TO-220
56688
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
ST
23+
TO-220
16900
正規(guī)渠道,只有原裝!
 詢價(jià)
ST
21+
TO-220
23480
詢價(jià)
ST
25+
TO-220
18000
全新原裝
 詢價(jià)
CDE
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
 詢價(jià)
Cornell
22+
NA
75
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價(jià)
INFINEON
23+
Standard
8000
只做原裝現(xiàn)貨
 詢價(jià)
INFINEON
23+
Standard
7000
詢價(jià)
PEAK
2021+
SIP
11000
十年專營(yíng)原裝現(xiàn)貨,假一賠十
 詢價(jià)
更多P10P6F6供應(yīng)商 更新時(shí)間2025-4-25 15:43:00

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