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NX8562LB

1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DESCRIPTION TheNX7460LEisa1480nmpumpinglaserdiodemodulewithopticalisolatorforanEDFA(ErDopedopticalFiberAmplifier)thatcanexpandthetransmissionspanandcompensateopticallosses.IthasastrainedMultipleQuantumWell(st-MQW)DC-PBHlaserdiodethatfeatureshighoutput

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NX8562LB

1 550 nm CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE

DESCRIPTION TheNX8562LBisa1550nmlaserdiodewithPolarizationMaintainFiber(PMF). ThisdeviceisdesignedasCWlightsourceandidealfortransmissionsystemsinwhichexternalmodulatorsareused. FEATURES ?OutputpowerPf=20mWMIN. ?WavelengthselectableforITU-Tstandards

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NX8562LB

1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DESCRIPTION TheNX8501Seriesisa1510nmphase-shiftedDFB(DistributedFeed-Back)laserdiodewithsinglemodefiber. TheMultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverwidetemperaturerangeof0to+65°C. Itisdesigned

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NX8562LB

CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS

DESCRIPTION TheNX8563LBSeriesisa1550nmlaserdiodewithPolarizationMaintainFiber(PMF). ThisdeviceisdesignedasCWlightsourceandidealforD-WDMtransmissionsystemsinwhichexternalmodulatorsareused. FEATURES ?OutputpowerPf=10mWMIN. ?Wavelengthavailabilityλp=1

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NX8562LB

NECs CW InGaAsP MQW DFB LASER DIODE MODULE

CEL

California Eastern Labs

NX8562LB-BA

1 550 nm CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE

DESCRIPTION TheNX8562LBisa1550nmlaserdiodewithPolarizationMaintainFiber(PMF). ThisdeviceisdesignedasCWlightsourceandidealfortransmissionsystemsinwhichexternalmodulatorsareused. FEATURES ?OutputpowerPf=20mWMIN. ?WavelengthselectableforITU-Tstandards

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NX8562LB-CA

1 550 nm CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE

DESCRIPTION TheNX8562LBisa1550nmlaserdiodewithPolarizationMaintainFiber(PMF). ThisdeviceisdesignedasCWlightsourceandidealfortransmissionsystemsinwhichexternalmodulatorsareused. FEATURES ?OutputpowerPf=20mWMIN. ?WavelengthselectableforITU-Tstandards

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NX8562LB279-BA

NECs CW InGaAsP MQW DFB LASER DIODE MODULE FOR DWDM APPLICATION (20 mW MIN)

CEL

California Eastern Labs

NX8562LB287-BA

NECs CW InGaAsP MQW DFB LASER DIODE MODULE FOR DWDM APPLICATION (20 mW MIN)

CEL

California Eastern Labs

NX8562LB295-BA

NECs CW InGaAsP MQW DFB LASER DIODE MODULE FOR DWDM APPLICATION (20 mW MIN)

CEL

California Eastern Labs

詳細(xì)參數(shù)

  • 型號(hào)：

    NX8562LB

  • 制造商：

    NEC

  • 制造商全稱(chēng)：

    NEC

  • 功能描述：

    CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
CEL
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
 詢(xún)價(jià)
24+
N/A
76000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
 詢(xún)價(jià)
更多NX8562LB供應(yīng)商 更新時(shí)間2025-4-26 15:00:00

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