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NX8349TB

LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

DESCRIPTION TheNX8349TBisa1310nmMultipleQuantumWell(MQW)structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteropticalsubassembly)withInGaAsmonitorPIN-PDinareceptacletypepackagedesignedforSFP+/XFPtransceiver. FEATURES ?Internalopticalisolator ?Optical

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NX8349TS

LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

DESCRIPTION TheNX8349TS,NX8349YK,NX8349XKare1310nmMultipleQuantumWells(MQW)structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteropticalsubassembly)withInGaAsmonitorPIN-PDinareceptacletypepackagedesignedforSFP+/XFPtransceiver. FEATURES ?Internaloptical

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NX8349XK

LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

DESCRIPTION TheNX8349TS,NX8349YK,NX8349XKare1310nmMultipleQuantumWells(MQW)structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteropticalsubassembly)withInGaAsmonitorPIN-PDinareceptacletypepackagedesignedforSFP+/XFPtransceiver. FEATURES ?Internaloptical

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NX8349YK

LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

DESCRIPTION TheNX8349TS,NX8349YK,NX8349XKare1310nmMultipleQuantumWells(MQW)structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteropticalsubassembly)withInGaAsmonitorPIN-PDinareceptacletypepackagedesignedforSFP+/XFPtransceiver. FEATURES ?Internaloptical

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NX8350TS

LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION

DESCRIPTION TheNX8350TSisa1271to1331nmMultipleQuantumWell(MQW)structuredDistributedFeed-Back(DFB)laserdiodeTOSAs(transmitteropticalsubassembly)withInGaAsmonitorPIN-PDinanLCreceptacletypepackagedesignedforCFPtransceiver. FEATURES ?Internalopticalisolator

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NX8369TB

LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

DESCRIPTION TheNX8369TBisa1310nmMultipleQuantumWell(MQW)structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteropticalsubassembly)withInGaAsmonitorPIN-PDinareceptacletypepackagedesignedforSFP+/XFPtransceiver. FEATURES ?Internalopticalisolator ?Optical

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NX8369TS

LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

DESCRIPTION TheNX8369TSisa1310nmMultipleQuantumWell(MQW)structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteropticalsubassembly)withInGaAsmonitorPIN-PDinareceptacletypepackagedesignedforSFP+/XFPtransceiver. FEATURES ?Internalopticalisolator ?Optical

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NX8501

1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DESCRIPTION TheNX8501Seriesisa1510nmphase-shiftedDFB(DistributedFeed-Back)laserdiodewithsinglemodefiber. TheMultipleQuantumWell(MQW)structureisadoptedtoachievestabledynamicsinglelongitudinalmodeoperationoverwidetemperaturerangeof0to+65°C. Itisdesigned

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NX8501

1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DESCRIPTION TheNX7460LEisa1480nmpumpinglaserdiodemodulewithopticalisolatorforanEDFA(ErDopedopticalFiberAmplifier)thatcanexpandthetransmissionspanandcompensateopticallosses.IthasastrainedMultipleQuantumWell(st-MQW)DC-PBHlaserdiodethatfeatureshighoutput

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NX8501

InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION

DESCRIPTION TheNX7660JCisa1625nmnewlydevelopedStrainedMultipleQuantumWell(St-MQW)structurelaserdiodeDIPmodulewithsinglemodefiberandinternalthermoelectriccooler.Itisdesignedforlightsourcesoftelemetryequipment. FEATURES ?OutputpowerPf=5mWMIN.@IF=65mA

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

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更多NX8供應(yīng)商 更新時(shí)間2025-4-15 14:06:00

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