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NVTFS016N06C

MOSFET - Power, Single N-Channel, 8FL 60 V, 16.3 m, 32 A

Features ?SmallFootprint(3.3x3.3mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?NVTFWS016N06C?WettableFlankOptionforEnhancedOptical Inspection ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?Fr

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVTFS016N06CTAG

MOSFET - Power, Single N-Channel, 8FL 60 V, 16.3 m, 32 A

Features ?SmallFootprint(3.3x3.3mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?NVTFWS016N06C?WettableFlankOptionforEnhancedOptical Inspection ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?Fr

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

BSC016N06NS

OptiMOSTMPower-MOSFET

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BSC016N06NS

NewOptiMOS??40Vand60V

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BSC016N06NSSC

OptiMOSTMPower-MOSFET,60V

Features ?Doublesidecooledpackage-withlowestJuntion-topthermalresistance ?175°Crated ?Optimizedforsynchronousrectification ?100avalanchetested ?Superiorthermalresistance ?N-channel ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21 ?High

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BSC016N06NST

OptiMOSTMPower-MOSFET,60V

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

NTMFD016N06C

MOSFET-Power,DualN-Channel,DUALSO8FL60V,16.3m,32A

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVMFS016N06C

MOSFET-Power,SingleN-Channel,SO-8FL60V,15.6m,33A

Features ?SmallFootprint(5x6mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?NVMFWS016N06C?WettableFlankOptionforEnhancedOpticalInspection ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?Free,Hal

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVMYS016N06C

MOSFET-Power,SingleN-Channel60V,16m,33A

Features ?SmallFootprint(5x6mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?FreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVMYS016N06CTWG

MOSFET-Power,SingleN-Channel60V,16m,33A

Features ?SmallFootprint(5x6mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?FreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVTFWS016N06CTAG

MOSFET-Power,SingleN-Channel,8FL60V,16.3m,32A

Features ?SmallFootprint(3.3x3.3mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowQGandCapacitancetoMinimizeDriverLosses ?NVTFWS016N06C?WettableFlankOptionforEnhancedOptical Inspection ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?Fr

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

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onsemi(安森美)
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50
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13500
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2232+
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4622
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589220
16余年資質(zhì) 絕對(duì)原盒原盤 更多數(shù)量
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2023+
WDFN-8
8800
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ON
23+
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9000
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10000
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更多NVTFS016N06C供應(yīng)商 更新時(shí)間2024-11-17 8:14:00