NV6123

650 V GaNFast? Power IC; GaNFast? Power IC\r\n? Thermally-enhanced version of NV6113\r\n? Large cooling pad\r\n? Enhanced thermals when using CS resistor\r\n? Monolithically-integrated gate drive\r\n? Wide VCC range (10 to 30 V)\r\n? Programmable turn-on dV/dt\r\n? 200 V/ns dV/dt immunity\r\n? 650 V eMode GaN FET\r\n? Low 300 m? resistance\r\n? Zero reverse-recovery charge\r\n? 2 MHz operation\r\n\r\nSmall, low-profile SMT QFN\r\n? 6 x 8 mm footprint, 0.85 mm profile\r\n? Minimized package inductance\r\n\r\nEnvironmental\r\n? RoHS, Pb-free, REACH-compliant;

The NV6123 is a thermally-enhanced version of the popular NV6113 650 V GaNFast? power IC, optimized for high-frequency and soft-switching topologies.\r\n\r\n Monolithic integration of FET, drive and logic creates an easy-to-use ‘digital in, power out’ high performance powertrain building block, enabling designers to create the fastest, smallest, most efficient integrated powertrain in the world.\r\n\r\n The highest dV/dt immunity, high-speed integrated drive and industry standard low-profile, low-inductance, 6 x 8 mm SMT QFN package allow designers to exploit Navitas GaN technology with simple, quick, dependable solutions for breakthrough power density and efficiency.\r\n\r\n Navitas’ GaNFast? power ICs extend the capabilities of traditional topologies such as flyback, half-bridge, resonant, etc. to MHz+ and enable the commercial introduction of breakthrough designs.

NV6123

Package：30-PowerVQFN；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：集成電路（IC） 配電開(kāi)關(guān)，負(fù)載驅(qū)動(dòng)器 描述：IC PWR GANFAST N-CH 1:1 30QFN

Navitas Semiconductor, Inc.

NV6123-RA

Package：30-PowerVQFN；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：集成電路（IC） 配電開(kāi)關(guān)，負(fù)載驅(qū)動(dòng)器 描述：IC PWR GANFAST N-CH 1:1 30QFN

Navitas Semiconductor, Inc.

PCL6123

ProgrammablePulseGeneratorsPCL/PCDSeries

PE6123

Non-ShortingDustCapforSMCPlugWith2.5InchChain

PE6123

SMCPlugNon-ShortingDustCapWith2.5InchChain