NV24C512MUW集成電路（IC）的存儲器規(guī)格書PDF中文資料

NV24C512MUW屬于集成電路（IC）的存儲器。由安森美半導體公司制造生產的NV24C512MUW存儲器存儲器是集成電路上用作數據存儲設備的半導體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

Description

The NV24C512MUW is a EEPROM Serial 512?Kb I2C, internally

organized as 65,536 words of 8 bits each.

It features a 128?byte page write buffer and supports the Standard

(100 kHz), Fast (400 kHz) and Fast?Plus (1 MHz) I2C protocol.

Write operations can be inhibited by taking the WP pin High (this

protects the entire memory).

External address pins make it possible to address up to eight

NV24C512MUW devices on the same bus.

On?Chip ECC (Error Correction Code) makes the device suitable

for high reliability applications.

Features

? Automotive AEC?Q100 Grade 1 (?40°C to +125°C) Qualified

? Supports Standard, Fast and Fast?Plus I2C Protocol

? 2.5 V to 5.5 V Supply Voltage Range

? 128?Byte Page Write Buffer

? Hardware Write Protection for Entire Memory

? Schmitt Triggers and Noise Suppression Filters on I2C Bus Inputs

(SCL and SDA)

? Low Power CMOS Technology

? 1,000,000 Program/Erase Cycles

? 100 Year Data Retention

? 8?lead SOIC, TSSOP, UDFN and 8?ball WLCSP Packages

? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS

Compliant