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NUP2105L-AQ

ESD Protection Diodes in SMD

Diotec

Diotec Semiconductor

NUP2105L-Q

ESDProtectionDiodesinSMD

Diotec

Diotec Semiconductor

PCF2105

LCDcontroller/driver

GENERALDESCRIPTION ThePCF2105integratedcircuitissimilartothePCF2114x(describedinthe“PCF2116family”datasheet)butdoesnotcontainthehighvoltagegeneratorofthatdevice. Furthermore,afastI2C-businterface(400kHz)isprovided. ThePCF2105isoptimizedforchip-on-gl

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PCF2105MU

LCDcontroller/driver

GENERALDESCRIPTION ThePCF2105integratedcircuitissimilartothePCF2114x(describedinthe“PCF2116family”datasheet)butdoesnotcontainthehighvoltagegeneratorofthatdevice. Furthermore,afastI2C-businterface(400kHz)isprovided. ThePCF2105isoptimizedforchip-on-gl

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PLM2105DR

LM2105105-V,0.5-A/0.8-AHalf-BridgeDriverwith5-VUVLOandIntegratedBootstrapDiode

1Features ?DrivestwoN-channelMOSFETsinhalf-bridge configuration ?Integratedbootstrapdiode ?5-VtypicalundervoltagelockoutonGVDD ?105-VmaximumrecommendedvoltageonBST ?–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH ?0.5-A/0.8-Apeaksource/sinkcurr

TITexas Instruments

德州儀器美國(guó)德州儀器公司

PLM2105DR

LM2105105-V,0.5-A,0.8-AHalf-BridgeDriverwith5-VUVLOandIntegratedBootstrapDiode

1Features ?DrivestwoN-channelMOSFETsinhalf-bridge configuration ?Integratedbootstrapdiode ?5-VtypicalundervoltagelockoutonGVDD ?105-VmaximumrecommendedvoltageonBST ?–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH ?0.5-A/0.8-Apeaksource/sinkcurr

TITexas Instruments

德州儀器美國(guó)德州儀器公司

PLM2105DR

LM2105107-V,0.5-A,0.8-AHalf-BridgeDriverwith5-VUVLOandIntegratedBootstrapDiode

1Features ?DrivestwoN-channelMOSFETsinhalf-bridge configuration ?Integratedbootstrapdiode ?5-VtypicalundervoltagelockoutonGVDD ?107-VabsolutemaximumvoltageonBST ?–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH ?0.5-A/0.8-Apeaksource/sinkcurrent

TITexas Instruments

德州儀器美國(guó)德州儀器公司

PLM2105DSGR

LM2105105-V,0.5-A/0.8-AHalf-BridgeDriverwith5-VUVLOandIntegratedBootstrapDiode

1Features ?DrivestwoN-channelMOSFETsinhalf-bridge configuration ?Integratedbootstrapdiode ?5-VtypicalundervoltagelockoutonGVDD ?105-VmaximumrecommendedvoltageonBST ?–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH ?0.5-A/0.8-Apeaksource/sinkcurr

TITexas Instruments

德州儀器美國(guó)德州儀器公司

PM2105

1WATTRFICPOWERAMPLIFIER800TO2000MHZOPERATION

ETCList of Unclassifed Manufacturers

未分類(lèi)制造商

PTFA2105

Verticallevelsensor

CELDUCcelduc Relais

凡紀(jì)繼電器凡紀(jì)繼電器(上海)有限公司

PV2105

Wide-Input,SynchronousBuckDigitalControllerwithAuto-Control&SMBus??PMBus??forUSB-PD

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

RF2105

HIGHPOWERLINEARUHFAMPLIFIER

ProductDescription TheRF2105Lisahighpower,highefficiencylinearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierindigitalcellularphonetransmittersorISMa

RFMD

RF Micro Devices

RF2105L

HIGHPOWERLINEARUHFAMPLIFIER

ProductDescription TheRF2105Lisahighpower,highefficiencylinearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierindigitalcellularphonetransmittersorISMa

RFMD

RF Micro Devices

RF2105LPCBA

HIGHPOWERLINEARUHFAMPLIFIER

ProductDescription TheRF2105Lisahighpower,highefficiencylinearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierindigitalcellularphonetransmittersorISMa

RFMD

RF Micro Devices

RN2105

TOSHIBATransistorSiliconPNPEpitaxialType(PCTProcess)

Switching,InverterCircuit,InterfaceCircuit AndDriverCircuitApplications Built-inbiasresistors Simplifiedcircuitdesign Fewerpartsandsimplifiedmanufacturingprocess ComplementarytoRN1101~RN1106

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

RN2105

SiliconPNPEpitaxialType(PCTProcess)Switching,InverterCircuit,InterfaceCircuitAndDriverCircuitApplications

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

RN2105

Switching,InverterCircuit,InterfaceCircuitandDriverCircuitApplications

Switching,InverterCircuit,InterfaceCircuit AndDriverCircuitApplications Built-inbiasresistors Simplifiedcircuitdesign Fewerpartsandsimplifiedmanufacturingprocess ComplementarytoRN1101~RN1106

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

RN2105ACT

Switching,InverterCircuit,InterfaceCircuitandDriverCircuitApplications

Switching,InverterCircuit,InterfaceCircuitandDriverCircuitApplications ?Extrasmallpackage(CST3)isapplicableforextrahighdensityfabrication. ?Incorporatingabiasresistorintoatransistorreducespartscount.Reducingthepartscountenablethemanufactureofevermor

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

RN2105CT

SwitchingApplicationsInverterCircuitApplicationsInterfaceCircuitApplicationsDriverCircuitApplications

SwitchingApplications InverterCircuitApplications InterfaceCircuitApplications DriverCircuitApplications ?Incorporatingabiasresistorintoatransistorreducespartscount.Reducingthepartscountenablethemanufactureofevermorecompactequipmentandsaveassemblycost

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

RN2105MFV

Switching,InverterCircuit,InterfaceCircuitandDriverCircuitApplications

Switching,InverterCircuit,InterfaceCircuitandDriverCircuitApplications Ultra-smallpackage,suitedtoveryhighdensitymounting Incorporatingabiasresistorintothetransistorreducesthenumberofparts,soenablingthemanufactureofevermorecompactequipmentandlowering

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

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更多NUP2105L-AQ供應(yīng)商 更新時(shí)間2024-10-23 15:18:00