NTE6234中文資料NTE數據手冊PDF規(guī)格書

Description:

The NTE6234 uses 2 high voltage power diodes in series and the semiconductors are electrically isolated from the metal base, allowing common heatsinks and compact assemblies to be built. This device is intended for general purpose applications such as battery chargers, welders and plating equipment and where high voltage and high current are required.

Features:

High Voltage

Electrically Isolated Base Plate

3000VRMS Isolating Voltage

High Surge Capability

Large Creepage Distances

Ratings and Characteristics:

Average Forward Current (TC = +100°C, 180° Conduction, Half Sine Wave), IF(AV) . . . . . . 195A

Maximum RMS Forward Current (As AC Switch), IT(RMS) . . . . . . . . . . . . . . . . . . 305A

Maximum Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . 1600V

Maximum Non–Repetitive Peak Reverse Voltage, VRSM . . . . . . . . . . . . . . . . . . 1700V

Maximum Peak Reverse Current (TJ = +150°C), IRRM . . . . . . . . . . . . .. . . . . . . . 50mA

RMS Isolation Voltage (50Hz, Circuit to Base, All Terminals Shorted, t = 1s), VISO . . . . . 3000V

Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . .. . . . . –40° to +150°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C

Thermal Resistance, Junction–to–Case (Per Module, DC Operation), RthJC . .. . . 0.20°C/W

Thermal Resistance, Case–to–Sink (Per Module, Note 1), RthCS . . . . . . .. . . . . . 0.035°C/W

Note 1. Mounting surface flat, smooth and greased.