NTE454中文資料NTE數(shù)據手冊PDF規(guī)格書
替換型號
NTE454規(guī)格書詳情
Description:
The NTE454 is a depletion mode dual gate MOSFET transistor designed for VHF amplifier and mixer applications.
Features:
Low Reverse Transfer Capacitance – Crss = 0.03pf (Max)
High Forward Transfer Admittance – |yfe| = 0–20 mmhos
Diode Protected Gates
3
4
Gate 1 Source
Absolute Maximum Ratings:
Drain Source Voltage, VDSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20Vdc
Drain–Gate Voltage, VDG1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30Vdc
VDG2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30Vdc
Gate Current, IG1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10mAdc
IG2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10mAdc
Drain Current–Continuous, ID . . . . . . . . . . . . . . . . . . . . . . . . . 60mAdc
Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . 360mW
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4mW/°C
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . 1.2Watt
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0mW/°C
Storage Channel Temperature Range, Tstg . . . . . . . –65 to +200°C
Junction Temperature Range, TJ . . . . . . . . . . . . . . . . –65 to +175°C
Lead Temperature, 1/16” from Seated Surface for 10 Seconds, TL . . . . 300°C
產品屬性
- 型號：
NTE454
- 制造商：
NTE Electronics
- 功能描述：
DUAL GATE RF MOSFET N CH 20V TO72
- 功能描述：
DUAL GATE RF MOSFET, N CH 20V, TO72
- 功能描述：
MOSFET-DUAL GATE- N-CH
- 功能描述：
DUAL GATE RF MOSFET, N CH 20V, TO72; Transistor Type
- 功能描述：
Trans RF MOSFET N-CH 20V 0.06A 3-Pin TO-72
