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NTE293

Silicon Complementary Transistors Audio Amplifier and Driver

Description: TheNTE293(NPN)andNTE294(PNP)aresiliconcomplementarytransistorsinaGiantTO92typepackagedesignedforuseinlow–frequencypoweramplificationanddriveapplications. Features: ●LowCollector–EmitterSaturationVoltage

NTE

NTE Electronics

NTE2930

MOSFET N-Channel, Enhancement Mode High Speed Switch

Features: ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerRDS(on):0.032?Typ ?LowerLeakageCurrent:10μA(Max)@VDS=100V

NTE

NTE Electronics

NTE2931

MOSFET N-Channel, Enhancement Mode High Speed Switch

Features: ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerRDS(on):0.144?Typ ●LowerLeakageCurrent:10μA(Max)@VDS=200V

NTE

NTE Electronics

NTE2932

MOSFET N-Channel, Enhancement Mode High Speed Switch

Features: ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerRDS(on):0.071?Typ ●LowerLeakageCurrent:10μA(Max)@VDS=200V

NTE

NTE Electronics

NTE2933

MOSFET N-Channel, Enhancement Mode High Speed Switch

Features: ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerRDS(on):0.437?Typ ●LowerLeakageCurrent:10μA(Max)@VDS=400V

NTE

NTE Electronics

NTE2934

MOSFET N-Channel, Enhancement Mode High Speed Switch

Features: ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerRDS(on):0.254?Typ ●LowerLeakageCurrent:10μA(Max)@VDS=400V

NTE

NTE Electronics

NTE2935

MOSFET N-Channel, Enhancement Mode High Speed Switch

Features: ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerRDS(on):0.638?Typ ●LowerLeakageCurrent:10μA(Max)@VDS=500V

NTE

NTE Electronics

NTE2936

MOSFET N-Channel, Enhancement Mode High Speed Switch

Features: ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerRDS(on):0.308?Typ ●LowerLeakageCurrent:10μA(Max)@VDS=500V

NTE

NTE Electronics

OP293

Precision,MicropowerOperationalAmplifiers

FEATURES Operatesfrom+1.7Vto±18V Lowsupplycurrent:15μA/amplifier Lowoffsetvoltage:100μVmaximum Outputssinkandsource:±8mA Nophasereversal Single-ordual-supplyoperation Highopen-loopgain:600V/mV Unity-gainstable APPLICATIONS Digitalscales Straingages Porta

ADAnalog Devices

亞德諾亞德諾半導體技術有限公司

OP293

Precision,MicropowerOperationalAmplifiers

GENERALDESCRIPTION TheOP193familyofsingle-supplyoperationalamplifiersfeaturesacombinationofhighprecision,lowsupplycurrentandtheabilitytooperateatlowvoltages.Forhighperformanceinsingle-supplysystemstheinputandoutputrangesincludeground,andtheoutputsswingfro

ADAnalog Devices

亞德諾亞德諾半導體技術有限公司

詳細參數(shù)

  • 型號：

    NTE293

  • 制造商：

    NTE Electronics

  • 功能描述：

    TRANSISTOR NPN SILICON 60V IC=1A GIANT TO-92 CASE AUDIO AMP & DRIVER COMP'L TO N

  • 功能描述：

    RF TRANSISTOR NPN -3V 200MHZ TO-92

  • 功能描述：

    RF TRANSISTOR, NPN, -3V, 200MHZ, TO-92

  • 功能描述：

    T-NPN- SI-AF POPD .75 W

  • 功能描述：

    RF TRANSISTOR, NPN, -3V, 200MHZ, TO-92; Transistor

  • Polarity：

    NPN; Collector Emitter Voltage

  • V(br)ceo：

    50V; Transition Frequency Typ

  • ft：

    200MHz; Power Dissipation

  • Pd：

    1W; DC Collector

  • Current：

    1A; DC Current Gain

  • hFE：

    240; No. of

  • Pins：

    3 ;RoHS

  • Compliant：

    Yes

  • 功能描述：

    Trans GP BJT NPN 50V 1A 3-Pin TO-92

供應商型號品牌批號封裝庫存備注價格
新
5
全新原裝 貨期兩周
 詢價
2022+
1
全新原裝 貨期兩周
 詢價
24+
N/A
73000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
NTE
23+
39329
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
NTE
D16
Rohsv
5000
全新原裝現(xiàn)貨 樣品可售
 詢價
更多NTE293供應商 更新時間2025-3-29 16:06:00

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