零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
NTE2338 | Silicon NPN Transistor Darlington Power Amp w/Internal Damper & Zener Diode AbsoluteMaximumRatings:(TA=+25°Cunlessotherwisespecified) Collector–EmitterVoltage,VCEO.......................60±10V Emitter–BaseVoltage,VEBO................................7V CollectorCurrent,IC Continuous | NTE NTE Electronics | NTE | |
MicroSIZE,Single-SupplyCMOSOPERATIONALAMPLIFIERSMicroAmplifierSeries | TI1Texas Instruments 德州儀器 | TI1 | ||
MicroSIZE,Single-SupplyCMOSOPERATIONALAMPLIFIERS | TI1Texas Instruments 德州儀器 | TI1 | ||
MicroSIZE,Single-SupplyCMOSOPERATIONALAMPLIFIERSMicroAmplifierSeries | TI1Texas Instruments 德州儀器 | TI1 | ||
MicroSIZE,Single-SupplyCMOSOPERATIONALAMPLIFIERSMicroAmplifier??Series | BURR-BROWN Burr-Brown (TI) | BURR-BROWN | ||
MicroSIZE,Single-SupplyCMOSOPERATIONALAMPLIFIERSMicroAmplifier??Series | BURR-BROWN Burr-Brown (TI) | BURR-BROWN | ||
MicroSIZE,Single-SupplyCMOSOPERATIONALAMPLIFIERSMicroAmplifier??Series | BURR-BROWN Burr-Brown (TI) | BURR-BROWN | ||
MicroSIZE,Single-SupplyCMOSOPERATIONALAMPLIFIERS | TI1Texas Instruments 德州儀器 | TI1 | ||
HeatShrinkTubing | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
150mWStereoAudioPowerAmplifier DESCRIPTION ThePT2338isastereopoweramplifierdesignedfortheaudioequipment;itispossibletodeliveryupto150mWpowertothe16?loads.Overallvoltagegainisdeterminebytheexternalresistors,forsomeapplicationneedshighercommonmoderejectperformancetocancelingcommonm | PTCPrinceton Technology Corporation 普誠普誠科技 | PTC | ||
150mWStereoAudioPowerAmplifier DESCRIPTION ThePT2338isastereopoweramplifierdesignedfortheaudioequipment;itispossibletodeliveryupto150mWpowertothe16?loads.Overallvoltagegainisdeterminebytheexternalresistors,forsomeapplicationneedshighercommonmoderejectperformancetocancelingcommonm | PTCPrinceton Technology Corporation 普誠普誠科技 | PTC | ||
GENERALPURPOSEAMPLIFIER ProductDescription TheRF2338isageneralpurpose,low-costRFamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasaneasily-cascadable50?gainblock.ApplicationsincludeIFandRFamplifica | RFMD RF Micro Devices | RFMD | ||
GENERALPURPOSEAMPLIFIER ProductDescription TheRF2338isageneralpurpose,low-costRFamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasaneasily-cascadable50?gainblock.ApplicationsincludeIFandRFamplifica | RFMD RF Micro Devices | RFMD | ||
N-Channel30V(D-S)MOSFET FEATURES ?TrenchFET?powerMOSFET ?Lowon-resistance ?100Rgtested ?Materialcategorization:? ??fordefinitionsofcompliancepleasesee ??www.vishay.com/doc?99912 APPLICATIONS ?DC/DCconverters,highspeedswitching | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
N-Channel30V(D-S)MOSFET | TFUNKVishay Telefunken 威世威世(VISHAY)集團(tuán) | TFUNK | ||
N-Channel30V(D-S)MOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Wireless,RFSAWFilter | Transko Transko Electronics, Inc. | Transko | ||
Wireless,RFSAWFilter | Transko Transko Electronics, Inc. | Transko | ||
P-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
P-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
24+ |
N/A |
52000 |
一級代理-主營優(yōu)勢-實(shí)惠價格-不悔選擇 |
詢價 | |||
新 |
55 |
全新原裝 貨期兩周 |
詢價 | ||||
NTE |
23+ |
65480 |
詢價 | ||||
2022+ |
51 |
全新原裝 貨期兩周 |
詢價 | ||||
NTE |
23+ |
TO-220 |
39265 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 |
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