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NTE21

Silicon Complementary Transistors High Power, Low Collector Saturation Voltage Power Output

Features: ?HighPowerinaCompactATRPackage:PO=1W Applications: ?RegulatedPowerSupplies ?1to2WOutputStages ?Drivers

NTE

NTE Electronics

NTE210

Silicon Complementary Transistors General Purpose Output & Driver

Description: TheNTE210(NPN)andNTE211(PNP)aresiliconcomplementarytransistorsinaTO202typepackagedesignedforgeneralpurpose,mediumvoltage,mediumpoweramplifieranddriverapplicationssuchasseries,shuntandswitchingregulators,andlowandhighfrequencyinvertersandconv

NTE

NTE Electronics

NTE2102

Integrated Circuit NMOS, 1K Static RAM (SRAM), 350ns

Description: TheNTE2101isahigh–speed1024x1bitstaticrandomaccessread/writememoryina16–LeadDIPtypepackagedesignedusingN–Channeldepletionmodesilicongatetechnology.Staticstoragecellseliminatetheneedforclockorrefreshcircuitry. LowthresholdsilicongateN–Cha

NTE

NTE Electronics

NTE211

Silicon Complementary Transistors General Purpose Output & Driver

Description: TheNTE210(NPN)andNTE211(PNP)aresiliconcomplementarytransistorsinaTO202typepackagedesignedforgeneralpurpose,mediumvoltage,mediumpoweramplifieranddriverapplicationssuchasseries,shuntandswitchingregulators,andlowandhighfrequencyinvertersandconv

NTE

NTE Electronics

NTE21128

Integrated Circuit NMOS, 128K (16K x 8) UV EPROM

Description: TheNTE21128isa131,072bitUVerasableandelectricallyprogrammablememoryEPROMina28–LeadDIPtypepackageorganizedas16,384wordsby8bits.Thetransparentlidallowstheusertoexposethechiptoultravioletlighttoerasethebitpattern.Anewpatterncanthenbewr

NTE

NTE Electronics

NTE21256

262,144-Bit Dynamic Random Access Memory (DRAM)

Description: TheNTE21256isa262,144wordby1–bitdynamicRandomAccessMemory.This5V–onlycomponentisfabricatedwithN–channelsilicongatetechnology. NinemultiplexedaddressinputspermittheNTE21256tobepackagedinanindustrystandard16–LeadDIPpackage.Featuresofthisdev

NTE

NTE Electronics

NTE213

Germanium PNP Transistor High Power, High Gain Amplifier

Description: TheNTE213isagermaniumPNPpowertransistorinaTO36typepackagedesignedhigh–power,high–gainapplicationsinhigh–reliabilityindustrialequipment.

NTE

NTE Electronics

NTE214

Silicon NPN Transistor Darlington Driver

Description: TheNTE214isasiliconNPNDarlingtontransistorinaTO3Ptypepackage.Typicalapplicationsincludemotordrivers,printerhammerdrivers,relaydrivers,regulatedDCpowersupplycontrollers. Features: ?HighDCCurrentGain ?LargeCurrentCapacityandWideASO ?

NTE

NTE Electronics

NTE215

Silicon NPN Transistor Darlington Driver

Description: TheNTE215isasiliconNPNDarlingtontransistorinaTO3Ptypepackage.Typicalapplicationsincludemotordrivers,printerhammerdrivers,relaydrivers,regulatedDCpowersupplycontrollers. Features: ?HighDCCurrentGain ?LargeCurrentCapacityandWideASO

NTE

NTE Electronics

NTE218

Silicon PNP Transistor Audio Power Output

Description: TheNTE218isidealforuseasadriver,switchandmedium–poweramplifierapplications.Thisdevicefeatures: Features: ?LowSaturationVoltage–0.6VCE(sat)@IC=1A ?HighGainCharacteristics–hFE@IC=250mA:30–100 ?ExcellentSafeAreaLimits

NTE

NTE Electronics

替換型號(hào)

詳細(xì)參數(shù)

  • 型號(hào)：

    NTE21

  • 制造商：

    NTE Electronics

  • 功能描述：

    Bipolar Transistor Transistor

  • Polarity：

    D

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
新
37
全新原裝 貨期兩周
 詢價(jià)
NTE
23+
65480
詢價(jià)
2022+
33
全新原裝 貨期兩周
 詢價(jià)
NTE
22+
NA
500000
萬(wàn)三科技,秉承原裝,購(gòu)芯無(wú)憂
 詢價(jià)
NTE
23+
TO-3
39250
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
24+
N/A
51000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
 詢價(jià)
OTAX
DIP-3
35560
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨
 詢價(jià)
OTAX
23+
NA
20000
全新原裝假一賠十
 詢價(jià)
OTAX
24+
NA
8600
正品原裝,正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊
 詢價(jià)
SANYO
24+
TO-3P
36500
原裝現(xiàn)貨/放心購(gòu)買
 詢價(jià)
更多NTE21供應(yīng)商 更新時(shí)間2025-3-26 16:06:00

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