零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
NTE21 | Silicon Complementary Transistors High Power, Low Collector Saturation Voltage Power Output Features: ?HighPowerinaCompactATRPackage:PO=1W Applications: ?RegulatedPowerSupplies ?1to2WOutputStages ?Drivers | NTE NTE Electronics | NTE | |
Silicon Complementary Transistors General Purpose Output & Driver Description: TheNTE210(NPN)andNTE211(PNP)aresiliconcomplementarytransistorsinaTO202typepackagedesignedforgeneralpurpose,mediumvoltage,mediumpoweramplifieranddriverapplicationssuchasseries,shuntandswitchingregulators,andlowandhighfrequencyinvertersandconv | NTE NTE Electronics | NTE | ||
Integrated Circuit NMOS, 1K Static RAM (SRAM), 350ns Description: TheNTE2101isahigh–speed1024x1bitstaticrandomaccessread/writememoryina16–LeadDIPtypepackagedesignedusingN–Channeldepletionmodesilicongatetechnology.Staticstoragecellseliminatetheneedforclockorrefreshcircuitry. LowthresholdsilicongateN–Cha | NTE NTE Electronics | NTE | ||
Silicon Complementary Transistors General Purpose Output & Driver Description: TheNTE210(NPN)andNTE211(PNP)aresiliconcomplementarytransistorsinaTO202typepackagedesignedforgeneralpurpose,mediumvoltage,mediumpoweramplifieranddriverapplicationssuchasseries,shuntandswitchingregulators,andlowandhighfrequencyinvertersandconv | NTE NTE Electronics | NTE | ||
Integrated Circuit NMOS, 128K (16K x 8) UV EPROM Description: TheNTE21128isa131,072bitUVerasableandelectricallyprogrammablememoryEPROMina28–LeadDIPtypepackageorganizedas16,384wordsby8bits.Thetransparentlidallowstheusertoexposethechiptoultravioletlighttoerasethebitpattern.Anewpatterncanthenbewr | NTE NTE Electronics | NTE | ||
262,144-Bit Dynamic Random Access Memory (DRAM) Description: TheNTE21256isa262,144wordby1–bitdynamicRandomAccessMemory.This5V–onlycomponentisfabricatedwithN–channelsilicongatetechnology. NinemultiplexedaddressinputspermittheNTE21256tobepackagedinanindustrystandard16–LeadDIPpackage.Featuresofthisdev | NTE NTE Electronics | NTE | ||
Germanium PNP Transistor High Power, High Gain Amplifier Description: TheNTE213isagermaniumPNPpowertransistorinaTO36typepackagedesignedhigh–power,high–gainapplicationsinhigh–reliabilityindustrialequipment. | NTE NTE Electronics | NTE | ||
Silicon NPN Transistor Darlington Driver Description: TheNTE214isasiliconNPNDarlingtontransistorinaTO3Ptypepackage.Typicalapplicationsincludemotordrivers,printerhammerdrivers,relaydrivers,regulatedDCpowersupplycontrollers. Features: ?HighDCCurrentGain ?LargeCurrentCapacityandWideASO ? | NTE NTE Electronics | NTE | ||
Silicon NPN Transistor Darlington Driver Description: TheNTE215isasiliconNPNDarlingtontransistorinaTO3Ptypepackage.Typicalapplicationsincludemotordrivers,printerhammerdrivers,relaydrivers,regulatedDCpowersupplycontrollers. Features: ?HighDCCurrentGain ?LargeCurrentCapacityandWideASO | NTE NTE Electronics | NTE | ||
Silicon PNP Transistor Audio Power Output Description: TheNTE218isidealforuseasadriver,switchandmedium–poweramplifierapplications.Thisdevicefeatures: Features: ?LowSaturationVoltage–0.6VCE(sat)@IC=1A ?HighGainCharacteristics–hFE@IC=250mA:30–100 ?ExcellentSafeAreaLimits | NTE NTE Electronics | NTE | ||
Silicon Power Transistor Audio Power Amp, Medium Speed Switch Description: TheNTE130(NPN)andNTE219(PNP)aresiliconcomplementarytransistorsinaTO3typecasedesignedforgeneralpurposeswitchingandamplifierapplications. Features: ?DCCurrentGain:hFE=20–70@IC=4A ?Collector–EmitterSaturationVoltage:VCE(sat)=1.1V(Max | NTE NTE Electronics | NTE | ||
MICROPROCESSOR & MEMORY CIRCUITS | NTE NTE Electronics | NTE | ||
MICROPROCESSOR & MEMORY CIRCUITS | NTE NTE Electronics | NTE | ||
MICROPROCESSOR & MEMORY CIRCUITS | NTE NTE Electronics | NTE | ||
Integrated Circuit MOS, Static 4K RAM, 300ns | NTE NTE Electronics | NTE | ||
MICROPROCESSOR & MEMORY CIRCUITS | NTE NTE Electronics | NTE | ||
MICROPROCESSOR & MEMORY CIRCUITS | NTE NTE Electronics | NTE | ||
MICROPROCESSOR & MEMORY CIRCUITS | NTE NTE Electronics | NTE | ||
MICROPROCESSOR & MEMORY CIRCUITS | NTE NTE Electronics | NTE | ||
Silicon NPN Transistor High Speed Switch, Core Driver | NTE NTE Electronics | NTE |
替換型號
詳細參數(shù)
- 型號:
NTE21
- 制造商:
NTE Electronics
- 功能描述:
Bipolar Transistor Transistor
- Polarity:
D
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
新 |
37 |
全新原裝 貨期兩周 |
詢價 | ||||
NTE |
23+ |
65480 |
詢價 | ||||
2022+ |
33 |
全新原裝 貨期兩周 |
詢價 | ||||
NTE |
22+ |
NA |
500000 |
萬三科技,秉承原裝,購芯無憂 |
詢價 | ||
NTE |
23+ |
TO-3 |
39250 |
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
24+ |
N/A |
51000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
OTAX |
DIP-3 |
35560 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
OTAX |
23+ |
NA |
20000 |
全新原裝假一賠十 |
詢價 | ||
NTE |
22+ |
CAN4( |
6521 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價 | ||
SANYO |
20+ |
TO-3P |
36500 |
原裝現(xiàn)貨/放心購買 |
詢價 |
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