NTE21

Silicon Complementary Transistors High Power, Low Collector Saturation Voltage Power Output

Features: ?HighPowerinaCompactATRPackage:PO=1W Applications: ?RegulatedPowerSupplies ?1to2WOutputStages ?Drivers

NTE210

Silicon Complementary Transistors General Purpose Output & Driver

Description: TheNTE210(NPN)andNTE211(PNP)aresiliconcomplementarytransistorsinaTO202typepackagedesignedforgeneralpurpose,mediumvoltage,mediumpoweramplifieranddriverapplicationssuchasseries,shuntandswitchingregulators,andlowandhighfrequencyinvertersandconv

NTE2102

Integrated Circuit NMOS, 1K Static RAM (SRAM), 350ns

Description: TheNTE2101isahigh–speed1024x1bitstaticrandomaccessread/writememoryina16–LeadDIPtypepackagedesignedusingN–Channeldepletionmodesilicongatetechnology.Staticstoragecellseliminatetheneedforclockorrefreshcircuitry. LowthresholdsilicongateN–Cha

NTE211

Silicon Complementary Transistors General Purpose Output & Driver

Description: TheNTE210(NPN)andNTE211(PNP)aresiliconcomplementarytransistorsinaTO202typepackagedesignedforgeneralpurpose,mediumvoltage,mediumpoweramplifieranddriverapplicationssuchasseries,shuntandswitchingregulators,andlowandhighfrequencyinvertersandconv

NTE21128

Integrated Circuit NMOS, 128K (16K x 8) UV EPROM

Description: TheNTE21128isa131,072bitUVerasableandelectricallyprogrammablememoryEPROMina28–LeadDIPtypepackageorganizedas16,384wordsby8bits.Thetransparentlidallowstheusertoexposethechiptoultravioletlighttoerasethebitpattern.Anewpatterncanthenbewr

NTE21256

262,144-Bit Dynamic Random Access Memory (DRAM)

Description: TheNTE21256isa262,144wordby1–bitdynamicRandomAccessMemory.This5V–onlycomponentisfabricatedwithN–channelsilicongatetechnology. NinemultiplexedaddressinputspermittheNTE21256tobepackagedinanindustrystandard16–LeadDIPpackage.Featuresofthisdev

NTE213

Germanium PNP Transistor High Power, High Gain Amplifier

Description: TheNTE213isagermaniumPNPpowertransistorinaTO36typepackagedesignedhigh–power,high–gainapplicationsinhigh–reliabilityindustrialequipment.

NTE214

Silicon NPN Transistor Darlington Driver

Description: TheNTE214isasiliconNPNDarlingtontransistorinaTO3Ptypepackage.Typicalapplicationsincludemotordrivers,printerhammerdrivers,relaydrivers,regulatedDCpowersupplycontrollers. Features: ?HighDCCurrentGain ?LargeCurrentCapacityandWideASO ?

NTE215

Silicon NPN Transistor Darlington Driver

Description: TheNTE215isasiliconNPNDarlingtontransistorinaTO3Ptypepackage.Typicalapplicationsincludemotordrivers,printerhammerdrivers,relaydrivers,regulatedDCpowersupplycontrollers. Features: ?HighDCCurrentGain ?LargeCurrentCapacityandWideASO

NTE218

Silicon PNP Transistor Audio Power Output

Description: TheNTE218isidealforuseasadriver,switchandmedium–poweramplifierapplications.Thisdevicefeatures: Features: ?LowSaturationVoltage–0.6VCE(sat)@IC=1A ?HighGainCharacteristics–hFE@IC=250mA:30–100 ?ExcellentSafeAreaLimits

NTE219

Silicon Power Transistor Audio Power Amp, Medium Speed Switch

Description: TheNTE130(NPN)andNTE219(PNP)aresiliconcomplementarytransistorsinaTO3typecasedesignedforgeneralpurposeswitchingandamplifierapplications. Features: ?DCCurrentGain:hFE=20–70@IC=4A ?Collector–EmitterSaturationVoltage:VCE(sat)=1.1V(Max

NTE2102

MICROPROCESSOR & MEMORY CIRCUITS

NTE2104

MICROPROCESSOR & MEMORY CIRCUITS

NTE2107

MICROPROCESSOR & MEMORY CIRCUITS

NTE2114

Integrated Circuit MOS, Static 4K RAM, 300ns

NTE2114

MICROPROCESSOR & MEMORY CIRCUITS

NTE2117

MICROPROCESSOR & MEMORY CIRCUITS

NTE2128

MICROPROCESSOR & MEMORY CIRCUITS

NTE2147

MICROPROCESSOR & MEMORY CIRCUITS

NTE216

Silicon NPN Transistor High Speed Switch, Core Driver