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PBRN123ET

40V,600mANPNPBRET;R1=2.2kΩ,R2=2.2kΩ

1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP123ET 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturation

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123ET-Q

40V,600mANPNPBRET;R1=2.2kΩ,R2=2.2kΩ

1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP123ET-Q 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturati

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123Y

NPN800mA,40VBISSRETs;R1=2.2kW,R2=10kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123Y_SER

NPN800mA,40VBISSRETs;R1=2.2kW,R2=10kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123YK

NPN800mA,40VBISSRETs;R1=2.2kW,R2=10kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123YS

NPN800mA,40VBISSRETs;R1=2.2kW,R2=10kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123YT

NPN800mA,40VBISSRETs;R1=2.2kW,R2=10kW

Features *800mAoutputcurrentcapability *HighcurrentgainhFE *Built-inbiasresistors *Simplifiescircuitdesign *Lowcollector-emittersaturationvoltage VCEsat *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123YT

40V,600mANPNPBRET;R1=2.2kΩ,R2=10kΩ

1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP123YT 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturation

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRN123YT-Q

40V,600mANPNPBRET;R1=2.2kΩ,R2=10kΩ

1.Generaldescription NPNlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBRP123YT-Q 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturati

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBRP123ET

40V,600mAPNPPBRET;R1=2.2kΩ,R2=2.2kΩ

1.Generaldescription PNPlowVCEsatPerformance-Based(PB)Resistor-EquippedTransistor(RET)inasmallSOT23 (TO-236AB)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBRN123ET 2.Featuresandbenefits ?600mAoutputcurrentcapability ?Lowcollector-emittersaturation

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

詳細(xì)參數(shù)

  • 型號:

    NTE123AP

  • 制造商:

    NTE Electronics

  • 功能描述:

    TRANSISTOR NPN SILICON 75V IC=0.6A TO-92 AUDIO TO VHF FREQUENCY DRIVER SWITCH CO

  • 功能描述:

    Bulk

  • 功能描述:

    TRANSISTOR NPN 40V 0.6A TO-92

  • 功能描述:

    TRANSISTOR, NPN, 40V, 0.6A, TO-92

  • 功能描述:

    T-NPN-SI-AF/RF AMP

  • 功能描述:

    BIPOLAR TRANSISTOR, NPN, 40V, TO-92; Transistor

  • Polarity:

    NPN; Collector Emitter Voltage

  • V(br)ceo:

    40V; Transition Frequency Typ

  • ft:

    250MHz; Power Dissipation

  • Pd:

    625mW; DC Collector

  • Current:

    600mA; DC Current Gain

  • hFE:

    300; No. of

  • Pins:

    3 ;RoHS

  • Compliant:

    Yes

  • 功能描述:

    Trans GP BJT NPN 40V 0.6A 3-Pin TO-92

供應(yīng)商型號品牌批號封裝庫存備注價格
558
全新原裝 貨期兩周
詢價
NTE
21+
CAN3
12588
原裝正品,自己庫存 假一罰十
詢價
NTE
專業(yè)鐵帽
CAN3
500
原裝鐵帽專營,代理渠道量大可訂貨
詢價
NTE
專業(yè)鐵帽
CAN3
67500
鐵帽原裝主營-可開原型號增稅票
詢價
NTE
24+
CAN3
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
詢價
2022+
554
全新原裝 貨期兩周
詢價
NTE ELECTRONICS INC
2023+
SMD
898
安羅世紀(jì)電子只做原裝正品貨
詢價
NTE
2023+
CAN3
8800
正品渠道現(xiàn)貨 終端可提供BOM表配單。
詢價
24+
N/A
82000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
詢價
NTE
22+
NA
500000
萬三科技,秉承原裝,購芯無憂
詢價
更多NTE123AP供應(yīng)商 更新時間2025-6-25 16:05:00