首頁 >NTC040N120SC1>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
NTC040N120SC1 | Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, Bare Die Description SiliconCarbide(SiC)MOSFETusesacompletelynewtechnology thatprovidesuperiorswitchingperformanceandhigherreliability comparedtoSilicon.Inaddition,thelowONresistanceandcompact chipsizeensurelowcapacitanceandgatecharge.Consequently, systembenefitsincl | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
NTC040N120SC1 | MOSFET ??N??hannel, Silicon Carbide 1200 V, 40 m | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, Bare Die Description SiliconCarbide(SiC)MOSFETusesacompletelynewtechnology thatprovidesuperiorswitchingperformanceandhigherreliability comparedtoSilicon.Inaddition,thelowONresistanceandcompact chipsizeensurelowcapacitanceandgatecharge.Consequently, systembenefitsincl | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
MOSFET-SiCPower,SingleN-Channel1200V,40m,60A | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET–EliteSiC,40mohm,1200V,M1,TO-247-3L Features ?Typ.RDS(on)=40m ?UltraLowGateCharge(typ.QG(tot)=106nC) ?LowEffectiveOutputCapacitance(typ.Coss=140pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ? | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET–40mohm,1200V,M1,TO-247-3L Features ?Typ.RDS(on)=40m ?UltraLowGateCharge(typ.QG(tot)=106nC) ?LowEffectiveOutputCapacitance(typ.Coss=140pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ? | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET–40mohm,1200V,M1,D2PAK-7L Features ?Typ.RDS(on)=40m ?UltraLowGateCharge(Typ.QG(tot)=106nC) ?LowEffectiveOutputCapacitance(Typ.Coss=139pF) ?100AvalancheTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondleve | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
MOSFET??SiCPower,SingleN-Channel,D2PAK-7L | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
MOSFET??N??hannel,SiliconCarbide1200V,40m Description SiliconCarbide(SiC)MOSFETusesacompletelynewtechnology thatprovidesuperiorswitchingperformanceandhigherreliability comparedtoSilicon.Inaddition,thelowONresistanceandcompact chipsizeensurelowcapacitanceandgatecharge.Consequently, systembenefitsincl | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SiliconCarbide(SiC)MOSFET–40mohm,1200V,M1,TO-247-3L Features ?Typ.RDS(on)=40m ?UltraLowGateCharge(typ.QG(tot)=106nC) ?LowEffectiveOutputCapacitance(typ.Coss=140pF) ?100UILTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinte | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
MOSFET-SiCPower,SingleN-Channel1200V,40m,60A | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ON |
23+ |
- |
100000 |
全新原裝 |
詢價 | ||
onsemi(安森美) |
23+ |
- |
7793 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。 |
詢價 | ||
ON/安森美 |
22+ |
24000 |
原裝正品現(xiàn)貨,實單可談,量大價優(yōu) |
詢價 | |||
ON |
22+ |
NA |
554 |
原裝正品支持實單 |
詢價 | ||
ON SEMICONDUCTOR |
24+ |
con |
35960 |
查現(xiàn)貨到京北通宇商城 |
詢價 | ||
KR |
21+ |
R0603 |
9866 |
詢價 | |||
KUU |
23+ |
0603 |
38000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
GRACE |
23+ |
4kreel |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
GRACE |
2022 |
4kreel |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 | ||
GRACE |
23+ |
NA/ |
7250 |
原廠直銷,現(xiàn)貨供應(yīng),賬期支持! |
詢價 |
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