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NTC040N120SC1

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, Bare Die

Description SiliconCarbide(SiC)MOSFETusesacompletelynewtechnology thatprovidesuperiorswitchingperformanceandhigherreliability comparedtoSilicon.Inaddition,thelowONresistanceandcompact chipsizeensurelowcapacitanceandgatecharge.Consequently, systembenefitsincl

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTC040N120SC1

MOSFET ??N??hannel, Silicon Carbide 1200 V, 40 m

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTC040N120SC1_V01

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, Bare Die

Description SiliconCarbide(SiC)MOSFETusesacompletelynewtechnology thatprovidesuperiorswitchingperformanceandhigherreliability comparedtoSilicon.Inaddition,thelowONresistanceandcompact chipsizeensurelowcapacitanceandgatecharge.Consequently, systembenefitsincl

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTHL040N120SC1

MOSFET-SiCPower,SingleN-Channel1200V,40m,60A

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTHL040N120SC1

SiliconCarbide(SiC)MOSFET–EliteSiC,40mohm,1200V,M1,TO-247-3L

Features ?Typ.RDS(on)=40m ?UltraLowGateCharge(typ.QG(tot)=106nC) ?LowEffectiveOutputCapacitance(typ.Coss=140pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTHL040N120SC1

SiliconCarbide(SiC)MOSFET–40mohm,1200V,M1,TO-247-3L

Features ?Typ.RDS(on)=40m ?UltraLowGateCharge(typ.QG(tot)=106nC) ?LowEffectiveOutputCapacitance(typ.Coss=140pF) ?100UILTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) TypicalApplications ?

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVBG040N120SC1

SiliconCarbide(SiC)MOSFET–40mohm,1200V,M1,D2PAK-7L

Features ?Typ.RDS(on)=40m ?UltraLowGateCharge(Typ.QG(tot)=106nC) ?LowEffectiveOutputCapacitance(Typ.Coss=139pF) ?100AvalancheTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondleve

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVBG040N120SC1

MOSFET??SiCPower,SingleN-Channel,D2PAK-7L

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVC040N120SC1

MOSFET??N??hannel,SiliconCarbide1200V,40m

Description SiliconCarbide(SiC)MOSFETusesacompletelynewtechnology thatprovidesuperiorswitchingperformanceandhigherreliability comparedtoSilicon.Inaddition,thelowONresistanceandcompact chipsizeensurelowcapacitanceandgatecharge.Consequently, systembenefitsincl

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVHL040N120SC1

SiliconCarbide(SiC)MOSFET–40mohm,1200V,M1,TO-247-3L

Features ?Typ.RDS(on)=40m ?UltraLowGateCharge(typ.QG(tot)=106nC) ?LowEffectiveOutputCapacitance(typ.Coss=140pF) ?100UILTested ?AEC?Q101QualifiedandPPAPCapable ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinte

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVHL040N120SC1

MOSFET-SiCPower,SingleN-Channel1200V,40m,60A

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

供應(yīng)商型號品牌批號封裝庫存備注價格
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100000
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onsemi(安森美)
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7793
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24000
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NA
554
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ON SEMICONDUCTOR
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con
35960
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9866
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KUU
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38000
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50000
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GRACE
2022
4kreel
80000
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NA/
7250
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更多NTC040N120SC1供應(yīng)商 更新時間2024-11-28 16:20:00