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PMUX582FPWTSEP

TMUX582F-SEP±60-VProtected,Latch-upImmune8:1MultiplexerwithAdjustableFaultThresholdsinSpaceEnhancedPlastic

1Features ?Radiationhardened ?Singleeventlatch-up(SEL)immuneto43MeVcm2/ mgat125°C ?ELDRSfreeto30krad(Si) ?Totalionizingdose(TID)RLATforeverywaferlot upto20krad(Si) ?TIDcharacterizedupto50krad(Si) ?Spaceenhancedplastic ?Supplyrange:8Vto22Vor±

TITexas Instruments

德州儀器美國德州儀器公司

SIR582DP

N-Channel80V(D-S)MOSFET

FEATURES ?TrenchFET?GenVpowerMOSFET ?VerylowRDSxQgfigure-of-merit(FOM) ?TunedforthelowestRDSxQossFOM ?100RgandUIStested ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS ?Synchronousrectification ?Prima

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SM582X

SCHOTTKYBARRIERRECTIFIER

HORNBYNantong Hornby Electronic Co.,Ltd

南通康比電子南通康比電子有限公司

SNC582

TwoChannelDirectDriveSpeechController

SONiXSONiX Technology Company

松翰科技

SNC582

TwoChannelDirectDriveSpeechController?

INTRODUCTION SNC582isatwo-channelvoicesynthesizerICwithPWMdirectdrivecircuit.Itbuilt-ina4-bittinycontrollerwithone4-bitinputportandtwo4-bitI/Oports.ByprogrammingthroughthetinycontrollerinSNC582,user’svariedapplicationsincludingvoicesectioncombination,key

SONiXSONiX Technology Company

松翰科技

SPC582BX

SPC582BLine-32bitPowerArchitectureautomotiveMCUSinglecore80Mhz,1MByteFlash,ASIL-B

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

STBB582

SURFACEMOUNTBIDIRECTIONALTRANSIENTVOLTAGESUPPRESSOR

EIC

EIC discrete Semiconductors

STBK582

SURFACEMOUNTBIDIRECTIONALTRANSIENTVOLTAGESUPPRESSOR

EIC

EIC discrete Semiconductors

STBN582

SURFACEMOUNTBIDIRECTIONALTRANSIENTVOLTAGESUPPRESSOR

EIC

EIC discrete Semiconductors

STBP582

SURFACEMOUNTBIDIRECTIONALTRANSIENTVOLTAGESUPPRESSOR

EIC

EIC discrete Semiconductors

STBS582

SURFACEMOUNTBIDIRECTIONALTRANSIENTVOLTAGESUPPRESSOR

EIC

EIC discrete Semiconductors

STUB582

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

EIC

EIC discrete Semiconductors

STUK582

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

EIC

EIC discrete Semiconductors

STUK582

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

EIC

EIC discrete Semiconductors

STUN582

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

EIC

EIC discrete Semiconductors

STUP582

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

VBR:6.8-440Volts PPK:400Watts FEATURES: *400Wsurgecapabilityat1ms *Excellentclampingcapability *Lowzenerimpedance *Fastresponsetime:typicallylessthen1.0psfrom0volttoVBR(min.) *TypicalIRlessthen1mAabove10V *Pb/RoHSFree

EIC

EIC discrete Semiconductors

STUP582

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

EIC

EIC discrete Semiconductors

STUS582

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

EIC

EIC discrete Semiconductors

STUS582

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

*500Wsurgecapabilityat1ms *Excellentclampingcapability *Lowzenerimpedance *Fastresponsetime:typicallylessthen1.0psfrom0volttoVBR(min.) *TypicalIRlessthen1mAabove10V

EIC

EIC discrete Semiconductors

TSB582

200mAoutputcurrentwiththermalshutdownandoutputcurrentlimiter,3.1MHz,36V,BiCMOSdualoperationalamplifier

Features ?Widesupplyvoltage:4V-36V ?Highoutputcurrent200mA ?Rail-to-railoutput,lowrailinput ?Gainbandwidthproduct:3.1MHz ?Highslewrate:2V/μs ?Internalthermalshutdown&outputcurrentlimiter ?EnhancedRFnoiseimmunity ?HightolerancetoESD:4kVHBM ?Ex

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán)

晶體管資料

  • 型號(hào):

    NSP582

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-PNP

  • 性質(zhì):

    低頻或音頻放大 (LF)_功率放大 (L)

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    100V

  • 最大電流允許值:

    3A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    3

  • 可代換的型號(hào):

    BD244C,BD592,CD50B,

  • 最大耗散功率:

    30W

  • 放大倍數(shù):

  • 圖片代號(hào):

    B-10

  • vtest:

    100

  • htest:

    999900

  • atest:

    3

  • wtest:

    30

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更多NSP582供應(yīng)商 更新時(shí)間2024-11-5 15:40:00