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NP90N04PDH

Product Scout Automotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP90N04PUF

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheNP90N04PUFisN-channelMOSFieldEffect Transistordesignedforhighcurrentswitching applications. FEATURES ?Channeltemperature175°Crating ?Superlowon-stateresistance RDS(on)=3.0mΩMAX.(VGS=10V,ID=45A) ?LowCiss:

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP90N04PUH

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP90N04VDG

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=90A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.0mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP90N04VDG

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP90N04VDG

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheNP90N04VDGisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Superlowon-stateresistance RDS(on)1=4.0mΩMAX.(VGS=10V,ID=45A) RDS(on)2=8.6mΩMAX.(VGS=4.5V,ID=35A) ?Highcurrentra

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP90N04VDK

40V–90A–N-channelPowerMOSFETApplication:Automotive

Features ?Superlowon-stateresistance RDS(on)=2.8m?MAX.(VGS=10V,ID=45A) ?LowCiss:Ciss=3900pFTYP.(VDS=25V) ?Logicleveldrivetype ?DesignedforautomotiveapplicationandAEC-Q101qualified

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP90N04VDK

N-ChannelMOSFETusesadvancedSGTtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

NP90N04VDK

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=90A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.8mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP90N04VLG

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=90A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.0mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP90N04VLG

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP90N04VLK

40V–90A–N-channelPowerMOSFETApplication:Automotive

Features ?Superlowon-stateresistance RDS(on)=2.8m?MAX.(VGS=10V,ID=45A) ?LowCiss:Ciss=3800pFTYP.(VDS=25V) ?Logicleveldrivetype ?DesignedforautomotiveapplicationandAEC-Q101qualified

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP90N04VLK

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=90A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.8mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP90N04VUG

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=90A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.0mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP90N04VUG

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP90N04VUG

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

NP90N04VUK

MOSFIELDEFFECTTRANSISTOR

Description TheNP90N04VUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=2.8m?MAX.(VGS=10V,ID=45A) ?LowCiss:Ciss=3900pFTYP.(VDS=25V) ?Designedforautomotiveapplicationan

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP90N04VUK

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP90N04VUK

MOSFIELDEFFECTTRANSISTOR

Description TheNP90N04VUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance RDS(on)=2.8mΩMAX.(VGS=10V,ID=45A) ?LowCiss:Ciss=3900pFTYP.(VDS=25V) ?Designedforautomotiveapplicationa

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP90N04VUK

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=90A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.8mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
NEC
17+
TO-263
31518
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NEC
23+
TO-263
6000
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NEC
22+
TO-263
25000
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NEC
24+
TO-263
8866
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NEC
23+
TO-263
11850
全新原裝
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R
24+
TO263
5000
只做原裝公司現(xiàn)貨
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RENESAS
TO-263
30216
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S
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NEC
6000
面議
19
TO-263
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RENESAS/瑞薩
21+
SOT-263
10000
原裝現(xiàn)貨假一罰十
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RENESAS
SOT-263
68900
原包原標(biāo)簽100%進口原裝常備現(xiàn)貨!
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更多NP90N04PDH供應(yīng)商 更新時間2024-11-16 14:00:00

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